Asml Netherlands B.v.

Niels Geypen

Maurits Van Der Schaar

Alexander Straaijer

Scott Anderson Middlebrooks

Hendrik Jan Hidde Smilde

Markus Gerardus Martinus Maria Van Kraaij

Sander Bas Roobol

Arie Jeffrey Den Boef

Simon Gijsbert Josephus Mathijssen

Nan Lin

Petrus Wilhelmus Smorenburg

Gerrit Jacobus Hendrik Brussaard

Teis Johan Coenen

Peter Danny Van Voorst

Disclosed is a method of performing a measurement in an inspection apparatus, and an associated inspection apparatus and HHG source. The method comprises configuring one or more controllable characteristics of at least one driving laser pulse of a high harmonic generation radiation source to control the output emission spectrum of illumination radiation provided by the high harmonic generation radiation source; and illuminating a target structure with said illuminating radiation. The method may comprise configuring the driving laser pulse so that the output emission spectrum comprises a plurality of discrete harmonic peaks. Alternatively the method may comprise using a plurality of driving laser pulses of different wavelengths such that the output emission spectrum is substantially monochromatic.

HHG source, inspection apparatus and method for performing a measurement

Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.

Metrology method and apparatus, lithographic system and device manufacturing method

A metrology apparatus for determining a characteristic of interest of a structure on a substrate, the structure having diffractive properties, the apparatus comprising: focusing optics configured to focus illumination radiation comprising a plurality of wavelengths onto the structure; a first detector configured to detect at least part of the illumination radiation which has been diffracted from the structure; and additional optics configured to produce, on at least a portion of the first detector, a wavelength-dependent spatial distribution of different wavelengths of the illumination radiation which has been diffracted from the structure, wherein the first detector is arranged to detect at least a non-zero diffraction order of the illumination radiation which has been diffracted from the structure.

Metrology apparatus for and a method of determining a characteristic of interest of a structure on a substrate

A method of aligning a pair of complementary diffraction patterns having a first complementary diffraction pattern and a second complementary diffraction pattern, the pair of complementary diffraction patterns obtained from performance of a metrology process on a structure formed by a lithographic process. The method includes performing at least a fine alignment stage to align the pair of complementary diffraction patterns. The alignment stage includes: interpolating measured values of the first complementary diffraction pattern over at least a portion of a detector area; and minimizing a residual between measured values in the second complementary diffraction pattern and corresponding interpolated values from the interpolation of the first complementary diffraction pattern, by one or both of translation and rotation of the second complementary diffraction pattern.

Method of aligning a pair of complementary diffraction patterns and associated metrology method and apparatus

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Lommel, Belgium

Niels Geypen