Asml Netherlands B.v.

Nicole Schoumans

Everhardus Cornelis Mos

Hubertus Johannes Gertrudus Simons

Michael Kubis

Peter Ten Berge

Paul Cornelis Hubertus Aben

Marcus Adrianus Van De Kerkhof

Richard Johannes Franciscus Van Haren

Franciscus Godefridus Casper Bijnen

Irina Lyulina

David Deckers

Remi Daniel Marie Edart

Xiuhong Wei

Birgitt Noëlle Cornelia Liduine Hepp

Remco Jochem Sebastiaan Groenendijk

A method of calculating process corrections for a lithographic tool, and associated apparatuses. The method comprises measuring process defect data on a substrate that has been previously exposed using the lithographic tool; fitting a process signature model to the measured process defect data, so as to obtain a model of the process signature for the lithographic tool; and using the process signature model to calculate the process corrections for the lithographic tool.

Inspection method and apparatus and lithographic processing cell

A method is used to estimate a value representative for a level of alignment mark deformation on a processed substrate using an alignment system. The alignment sensor system is able to emit light at different measuring frequencies to reflect from an alignment mark on the substrate and to detect a diffraction pattern in the reflected light in order to measure an alignment position of the alignment mark. The two or more measuring frequencies are used to measure an alignment position deviation per alignment mark associated with each of the two or more measuring frequencies relative to an expected predetermined alignment position of the alignment mark. A value is determined representative for the spread in the determined alignment position deviations per alignment mark in order to estimate the level of alignment mark deformation.

Alignment mark deformation estimating method, substrate position predicting method, alignment system and lithographic apparatus

A method is described for obtaining information for use in modeling of a lithographic process. A pattern feature is formed on a target portion of a substrate by projecting a beam of radiation onto the target portion of the substrate. For that target portion the lithographic process is characterized by one or both of a first property that varies in a first direction along a surface of the substrate, and a second property that varies in a second direction along a surface of the substrate. A property of the pattern feature is measured. Using the measured property of the pattern feature and at least one of the first and second properties, information is obtained for use in modeling the process. The lithographic process may be or include the projection of the beam of radiation onto the surface of the substrate.

Lithographic method and arrangement

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's-Hertogenbosch, Netherlands

Nicole Schoumans