Honeywell International Inc.

Alliedsignal Inc.

Battelle Memorial Institute

Intermolecular, Inc.

Nicole Rutherford

Anil Shriram Bhanap

Roger Yu-Kwan Leung

Paul E Burrows

Chi-I Lang

John D Affinito

Alexander A Gorer

Teresa A Ramos

Hui-Jung Wu

Gordon Lee Graff

Peter Maclyn Martin

Mark Edward Gross

Anh Duong

James S Drage

Zachary M Fresco

Nikhil D Kalyankar

Eric Sidney Mast

Michael G Hall

Zhe Ding

Wenya Fan

Ming-Kun Shi

Robert Walty

Ron Katsanes

Methods for simultaneously forming doped regions of opposite conductivity using non-contact printing processes are provided. In one exemplary embodiment, a method comprises the steps of depositing a first liquid dopant comprising first conductivity-determining type dopant elements overlying a first region of a semiconductor material and depositing a second liquid dopant comprising second conductivity-determining type dopant elements overlying a second region of the semiconductor material. The first conductivity-determining type dopant elements and the second conductivity-determining type dopant elements are of opposite conductivity. At least a portion of the first conductivity-determining type dopant elements and at least a portion of the second conductivity-determining type dopant elements are simultaneously diffused into the first region and into the second region, respectively.

Methods for simultaneously forming N-type and P-type doped regions using non-contact printing processes

Compositions comprise a purine compound; an alcohol amine; a quaternary ammonium salt; an amino acid, and optionally an antioxidant. The compositions are useful in post-CMP cleaning processes. One particular advantage of these compositions is that they can effectively remove slurry contamination without increasing the roughness of the copper surface.

Post-CMP cleaning compositions and methods of using same

Method for simultaneously forming doped regions having different conductivity-determining type elements profiles are provided. In one exemplary embodiment, a method comprises the steps of diffusing first conductivity-determining type elements into a first region of a semiconductor material from a first dopant to form a doped first region. Second conductivity-determining type elements are simultaneously diffused into a second region of the semiconductor material from a second dopant to form a doped second region. The first conductivity-determining type elements are of the same conductivity-determining type as the second conductivity-determining type elements. The doped first region has a dopant profile that is different from a dopant profile of the doped second region.

Methods for simultaneously forming doped regions having different conductivity-determining type element profiles

An encapsulated organic light emitting device. The device may include a substrate, an organic light emitting layer stack adjacent to the substrate, and at least one first barrier stack adjacent to the organic light emitting device, the at least one first barrier stack comprising at least one first barrier layer and at least one first decoupling layer wherein the at least one first barrier stack encapsulates the organic light emitting device. There may be a second barrier stack adjacent to the substrate and located between the substrate and the organic light emitting device. The second barrier stack has at least one second barrier layer and at least one second decoupling layer. A method of making the encapsulated organic light emitting device is also provided.

Environmental barrier material for organic light emitting device and method of making

A surface-coated nanoporous silica dielectric film that is prepared by a process comprising the steps of forming a nanoporous silica dielectric coating on a substrate, and coating the formed nanoporous silica dielectric film with a coating composition comprising a polymer precursor, under conditions effective to form a strength-enhancing and/or hydrophobicity enhancing layer on the treated nanoporous silica dielectric film.

Nanoporous silica treated with siloxane polymers for ULSI applications

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Saratoga, CA, United States of America

Nicole Rutherford