Arizona State University

Arizona Board of Regents, a Body Corporate

Nicole Herbots

Robert Culbertson

James D Bradley

Vasudeva Atluri

Justin Shaw

Shawn Whaley

Ross Bennett-Kennett

Ashlee Murphy

Quinton B Hurst

Brance Hudzietz

Murdock Allen Hart

David Alexander Sell

Shawn David Whaley

Sam Farmer

Banerjee Swati

Matthew Bade

Jiong Xiang

Substrates may be bonded according to a method comprising contacting a first bonding surface of a first substrate with a second bonding surface of a second substrate to form an assembly in the presence of an steam atmosphere under suitable conditions to form a bonding layer between the first and second surfaces, wherein the first bonding surface comprises a polarized surface layer; the second bonding surface comprises a hydrophilic surface layer; the first and second bonding surfaces are different.

Methods for wafer bonding and for nucleating bonding nanophases using wet and steam pressurization

Substrates may be bonded according to a method comprising contacting a first bonding surface of a first substrate with a second bonding surface of a second substrate to form an assembly; and compressing the assembly in the presence of an oxidizing atmosphere under suitable conditions to form a bonding layer between the first and second surfaces, wherein the first bonding surface comprises a polarized surface layer; the second bonding surface comprises a hydrophilic surface layer; the first and second bonding surfaces are different.

Methods for wafer bonding, and for nucleating bonding nanophases

The invention provides novel methods for preparing semiconductor substrates for the growth of an ultra-thin epitaxial interfacial phase thereon. The invention additionally provides the ultra-thin epitaxial interfacial phase formed on a semiconductor substrate prepared by the methods of the invention. Epitaxiality of the interfacial phase is ensured by maintaining the cleaned semiconductor substrate in a static and inert atmosphere prior to oxidation to form the interfacial phase. Such interfacial phase are useful as capping layers and dielectric layers for semiconductor devices.

Methods for preparing semiconductor substrates and interfacial oxides thereon

A semiconductor processing method capable of producing highly ordered, ultra thin dielectrics, including gate oxide and other semiconductor dielectrics, and interphase phases with low defect density. The process includes a degrease step, an etch, primary oxidation and then a passivation step which utilizes hydrofluoric acid to passivate the cleaned silicon surface with hydrogen. Dielectric layers may then be formed with low interface defect density, low flat band voltages and low fixed charge on semiconductor substrates.

Long range ordered semiconductor interface phase and oxides

Growing community of inventors

Tempe, AZ, United States of America

Nicole Herbots