Maxim Integrated Products, Inc.

Nicole Dorene Kerness

Joy T Jones

Arkadii V Samoilov

Zhihai Wang

Christopher Francis Edwards

Arvin Emadi

Anand K Chamakura

Pirooz Parvarandeh

David Skurnik

Nevzat Akin Kestelli

Sunny Kweisun Hsu

Cheng-Wei Pei

Ilya K Veygman

Stanley Barnett

Prashanth S Holenarsipur

Phillip J Benzel

Craig A Easson

Jerome Chandra Bhat

Kumar Nagarajan

Peter R Harper

Ke-Cai Zeng

Khanh Tran

Dan G Allen

Richard I Olsen

Timothy K McGuire

Abhishek Sahasrabudhe

Patrick Tam

A gesture sensing device includes a multiple segmented photo sensor and a control circuit for processing sensed voltages output from the sensor. The control circuit processes the sensed voltage signals to determine target motion relative to the segmented photo sensor. The control circuit includes an algorithm configured to calculate one of more differential analog signals using the sensed voltage signals output from the segmented photo sensors. A vector is determined according to the calculated differential analog signals, the vector is used to determine a direction and/or velocity of the target motion.

Method for detecting gestures using a multi-segment photodiode and one or fewer illumination sources

A device and techniques for fabricating the device are described for forming a wafer-level thermal sensor package using microelectromechanical system (MEMS) processes. In one or more implementations, a wafer level thermal sensor package includes a thermopile stack, which includes a substrate, a dielectric membrane, a first thermoelectric layer, a first interlayer dielectric, a second thermoelectric layer, a second interlayer dielectric, a metal connection assembly, a passivation layer, where the passivation layer includes at least one of a trench or a hole, and where the substrate includes a cavity adjacent to the at least one trench or hole, and a bond pad disposed on the passivation layer and electrically coupled to the metal connection assembly; and a cap wafer assembly coupled to the thermopile stack, the cap wafer assembly including a wafer having a cavity formed on a side of the wafer configured to be adjacent to the thermopile stack.

MEMS-based wafer level packaging for thermo-electric IR detectors

A gesture sensing device includes a single light source and a multiple segmented single photo sensor, or an array of photo sensors, collectively referred to herein as segmented photo sensors. A light modifying structure relays reflected light from the light source onto different segments of the segmented photo sensors. The light modifying structure can be an optical lens structure or a mechanical structure. The different segments of the photo sensor sense reflected light and output corresponding sensed voltage signals. A control circuit receives and processes the sensed voltage signals to determine target motion relative to the segmented photo sensor.

Optical gesture sensor having a light modifying structure

Aspects of the disclosure pertain to a system and method for reducing ambient light sensitivity of Infrared (IR) detectors. Optical filter(s) (e.g., absorption filter(s), interference filter(s)) placed over a sensor of the IR detector (e.g., gesture sensor) absorb or reflect visible light, while passing specific IR wavelengths, for promoting the reduced ambient light sensitivity of the IR detector.

System and method for reducing ambient light sensitivity of infrared (IR) detectors

A gas concentration sensor is includes an integrated die-form electromagnetic radiation source and an integrated die-form infrared detector. In one or more implementations, the gas concentration sensor includes a package substrate defining at least one aperture, a gas permeable mesh coupled to the package substrate and covering at least a portion of the at least one aperture, a die-form electromagnetic radiation source positioned in an interior region of the package substrate, a die-form detector positioned in the interior region of the package substrate, and control circuitry operably coupled to the die-form detector and configured to detect and calibrate one or more signal outputs from the die-form detector to determine a gas concentration within the interior region of the package substrate. The gas concentration sensor can be configured for specific detection of various gases through control of the spectral wavelengths emitted by the electromagnetic radiation source(s) and/or detected by the detector(s).

Fully integrated gas concentration sensor

Techniques are provided to furnish a light sensor that includes a filter positioned over a photodetector to filter visible and infrared wavelengths to permit the sensing of ultraviolet (UV) wavelengths. In one or more implementations, the light sensor comprises a semiconductor device (e.g., a die) that includes a substrate. A photodetector (e.g., photodiode, phototransistor, etc.) is formed in the substrate proximate to the surface of the substrate. In one or more implementations, the substrate comprises a silicon on insulator substrate (SOI). A filter (e.g., absorption filter, interference filter, flat pass filter, McKinlay-Diffey Erythema Action Spectrum-based filter, UVA/UVB filter, and so forth) is disposed over the photodetector. The filter is configured to filter infrared light and visible light from light received by the light sensor to at least substantially block infrared light and visible light from reaching the photodetector. The thickness of the SOI substrate can be tailored to modify received UV/visible wavelength ratios.

Ultraviolet sensor having filter

An infrared thermopile sensor, an electronic device, and a method for fabricating an infrared thermopile sensor using a front-end process that employ example techniques in accordance with the present disclosure are described herein. In an implementation, the infrared thermopile sensor includes a silicon substrate that has been implanted during front-end processing to form an implant region; a passivation layer disposed on a first side of the silicon substrate, where the passivation layer forms a membrane; and an interlayer dielectric formed on the passivation layer, where the interlayer dielectric includes at least one thermopile that includes at least one thermocouple in series; and at least one metallic interconnect that electrically couples the at least one thermopile to a bond pad; and at least one bond pad interconnect that electrically couples the implant region to the bond pad.

IR thermopile sensor with temperature reference formed in front-end process

Light sensors are described that include a trench structure integrated therein. In an implementation, the light sensor includes a substrate having a dopant material of a first conductivity type and multiple trenches disposed therein. The light sensor also includes a diffusion region formed proximate to the multiple trenches. The diffusion region includes a dopant material of a second conductivity type. A depletion region is created at the interface of the dopant material of the first conductivity type and the dopant material of the second conductivity type. The depletion region is configured to attract charge carriers to the depletion region, at least substantially a majority of the charge carriers generated due to light incident upon the substrate.

Light sensor with vertical diode junctions

A sensor package having a thermopile sensor and a reference thermopile sensor disposed therein. In one or more implementations, the sensor package includes a substrate, a thermopile sensor disposed over the substrate, a reference thermopile sensor disposed over the substrate, and a lid assembly disposed over the thermopile sensor and the reference thermopile sensor. The lid assembly includes a transparent structure that passes electromagnetic radiation occurring in a limited spectrum of wavelengths and an electromagnetic blocker disposed over the lid assembly. The electromagnetic blocker defines an aperture over the thermopile sensor such that at least a portion of the electromagnetic blocker is positioned over the reference thermopile sensor. The electromagnetic blocker is configured to at least substantially block the electromagnetic radiation occurring in a limited spectrum of wavelengths from reaching the reference thermopile sensor.

Thermopile temperature sensor with a reference sensor therein

A system includes one or more optical sensors for the measuring and monitoring of physiological information of a motorized system operator. The system is configured to determine an incapacitation state of the motorized system operator based upon the measured physiological information. When the measured physiological information indicates an incapacitation state (intoxication level, stress level, and so forth), the system is configured to provide a response thereto including, but not limited to: lock out operation of the motorized system, provide a warning on a display, transmit a message from the motorized system, assume automatic control of the motorized system, and so forth. The system includes a plurality of light sources (e.g., light-emitting diodes (LEDs)), one or more photodetectors, and control circuitry coupled to the plurality of light sources and/or photodetectors to non-invasively measure physiological information (e.g., blood alcohol concentration, stress levels, and so forth).

System including integrated optical sensors for determination of impairment of motorized system operators

The present disclosure describes an ultraviolet (UV) sensor configured to detect a target UV spectrum (e.g., UVB spectrum). The UV sensor includes a first photodiode with a first UV spectral response and a second photodiode with a second UV spectral response. A filter layer having a graded spectral response is formed over the second photodiode, and the second UV spectral response is affected by a controlled parameter (e.g., thickness) of the filter layer. The UV sensor further includes a subtraction circuit coupled with the first photodiode and the second photodiode. The subtraction circuit is configured to provide a differential response based on a difference between the first UV spectral response and the second UV spectral response. The controlled parameter of the filter layer can be selected such that the differential response provides a detected spectral response of the target spectrum.

Multi-channel UV detection for improved solar spectrum and UV index estimation

Techniques are described to furnish an IR suppression filter, or any other interference based filter, that is formed on a transparent substrate to a light sensor. In one or more implementations, a light sensor includes a substrate having a surface. One or more photodetectors are formed in the substrate. The photodetectors are configured to detect light and provide a signal in response thereto. An IR suppression filter configured to block infrared light from reaching the surface is formed on a transparent substrate. The light sensor may also include a plurality of color pass filters disposed over the surface. The color pass filters are configured to filter visible light to pass light in a limited spectrum of wavelengths to the one or more photodetectors. A buffer layer is disposed over the surface and configured to encapsulate the plurality of color pass filters and adhesion layer.

Light sensor having a contiguous IR suppression filter and transparent substrate

Techniques are described to furnish an IR suppression filter that is formed on a glass substrate to a light sensor. In one or more implementations, a light sensor includes a substrate having a surface. One or more photodetectors are formed in the substrate and configured to detect light and provide a signal in response thereto. An IR suppression filter configured to block infrared light from reaching the surface is formed on a glass substrate. The light sensor also includes a plurality of color pass filters disposed over the surface. The color pass filters are configured to filter visible light to pass light in a limited spectrum of wavelengths to the one or more photodetectors. A buffer layer is disposed over the surface and configured to encapsulate the plurality of color pass filters and adhesion layer. The light sensor further includes through-silicon vias to provide electrical interconnections between different conductive layers.

Light sensor having transparent substrate and through-substrate vias and a contiguous IR suppression filter

A planar diffractive optical element (DOE) lens is described herein. The planar DOE lens includes a substrate. The planar DOE lens further includes a first layer, the first layer being formed upon the substrate. The planar DOE lens further includes a diffractive optical element, the diffractive optical element being formed upon the first layer. The planar DOE lens further includes a second layer, the second layer being formed upon the first layer. The second layer is also formed over the diffractive optical element. The second layer encloses the diffractive optical element between the first layer and the second layer. The second layer includes a planar surface.

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Menlo Park, CA, United States of America

Nicole Dorene Kerness