Robert Boschgmbh

Nicolas Schorr

Christof Schwenk

Stefan Pinter

Rainer Straub

Heiko Stahl

Frank Reichenbach

Friedjof Heuck

Johannes Baader

Andreas Prinzen

Tina Steigert

A method for producing a bonding pad for a micromechanical sensor element. The method includes: depositing a first metal layer onto a top face of the functional layer, and depositing a second metal layer onto the first metal layer, wherein only the first layer or only the second layer is formed in a border region extending around a bonding pad region; covering a protective layer over a top face of the second metal layer in the bonding pad region and over the first or second metal layer in an inner peripheral portion of the border region, which inner peripheral portion adjoins the bonding pad region; etching the first or second layer at least in an outer peripheral portion of the border region down to the top face of the functional layer; removing the protective layer; carrying out an etching process starting from the top face of the layered structure.

Method for producing a bonding pad for a micromechanical sensor element

A method for forming a trench in a first semiconductor layer of a multi-layer system. The method includes: applying a mask layer onto the first semiconductor layer, a recess being formed in the mask layer so that the first semiconductor layer is exposed within the recess; applying a protective layer which completely covers or modifies the first semiconductor layer exposed within the recess; applying a second semiconductor layer; etching the second semiconductor layer to completely remove it in a subarea surrounding the recess of the mask layer; etching the protective layer so that the first semiconductor layer is exposed within the recess; and forming the trench in the first semiconductor layer, the recess of the mask layer serving as an etching mask, and the trench being formed by a cyclical alternation between etching and passivation steps, the first etching step being longer than the subsequent etching steps.

Method for forming a trench in a first semiconductor layer of a multi-layer system

A micromechanical apparatus and a corresponding production method are described. The micromechanical apparatus encompasses a base substrate having a front side and a rear side; and a cap substrate, at least one surrounding trench having non-flat side walls being embodied in the front side of the base substrate; the front side of the base substrate and the trench being coated with at least one metal layer; the non-flat side walls of the trench being covered nonconformingly with the metal so that they do not form an electrical current path in a direction extending perpendicularly to the front side; and a closure, in particular a seal-glass closure, being embodied in the region of the trench between the base substrate and the cap substrate.

Micromechanical device and corresponding production method

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Reutlingen, Germany

Nicolas Schorr