Centre National De La Recherche Scientifique

Université Paul Sabatier (Toulouse III)

Université Grenoble Alpes

Institut Polytechnique De Grenoble

Institut National Polytechnique De Toulouse

Institut National De La Sante Et De La Recherche Medicale (Inserm)

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Nicolas Rouger

Florin Udrea

Jean-Christophe Crebier

Romain Grezaud

David Eon

Etienne Gheeraert

Toan Thanh Pham

Clement Hebert

Martin Kah

Cedric Masante

Julien Pernot

A device including a first portion, a second portion, a first contact and a second contact, the first portion being made of a semiconductor having a first doping, the second portion being made of a semiconductor having a second doping different than the first, the first portion and the second portion forming a p/n junction including a depletion zone in the first portion, the contacts being configured so that when an electric voltage (V) is applied between the contacts, a dimension of the depletion zone depends on a value of the electric voltage, an ionization energy being defined for dopants of the second portion. The device includes an emitter generating a radiation having an energy greater than the ionization energy and illuminating the second portion with the radiation.

Optoelectronic device, single-photon generator, memory, multiplexer, implant and associated methods

Growing community of inventors

Toulouse, France

Nicolas Rouger