Centre National De La Recherche Scientifique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Institut Polytechnique De Grenoble

Université Grenoble Alpes

Univeriste Joseph Fourier

Université Joseph Fourier

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Nicolas Rouger

Jean-Christophe Crebier

Julie Widiez

Bastien Letowski

Florin Udrea

François Ayel

Julien Pernot

Romain Grezaud

Gauthier Chicot

Yves Lembeye

David Eon

Etienne Gheeraert

Hieu Trinh

Toan Thanh Pham

The invention relates to a deep depletion MIS transistor (), comprising: a source region (S) and a drain region (D) made of doped semiconductor diamond of a first conductivity type; a channel region (C) made of doped semiconductor diamond of the first conductivity type, arranged between the source region and the drain region; a drift region (DR) made of doped semiconductor diamond of the first conductivity type, arranged between the channel region and the drain region; and a conductive gate () arranged on the channel region and separated from the channel region by a dielectric layer ().

Diamond MIS transistor

An electronic power device including: a first electronic power component in which all the electrodes are arranged at a first main face of the first electronic power component; and an electric contact element in which a first main face is arranged against the first main face of the first electronic power component and which includes plural separate electrically conductive portions to which the electrodes of the first electronic power component are electrically connected. The first electronic power component and the electric contact element together form a stack such that a first lateral face of each of the portions of the electric contact element, substantially perpendicular to the first main face of the electric contact element, is arranged against at least one metallization of a support forming an electric contact of the first electronic power component.

Electronic power device with vertical 3D switching cell

Electronic power device with flat electronic interconnection structure

A circuit for controlling a first field-effect transistor of a power converter, intended for a converter including at least one first and one second transistor connected in series between two terminals for applying a first voltage, the circuit including a circuit for detecting the opening of the second transistor.

Control circuit for power converter

The invention relates to a voltage converter (), including: a plurality of two-way conversion cells (), each cell comprising a primary circuit (, Wp), and a secondary circuit (, Ws) that is insulated from the primary circuit, wherein each circuit can be separately activated in order to supply an output voltage from the converter; and at least one control circuit () configured to, in a first operating mode, control the activated cells in order to transfer electrical energy from the primary circuit to the secondary circuit, and control the inactivated cells in order to transfer electrical energy from the secondary circuit to the primary circuit.

Method and apparatus for a voltage converter having bidirectional power conversion cells

Growing community of inventors

Grenoble, France

Nicolas Rouger