Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Applied Materials, Inc.

Centre National De La Recherche Scientifique

Stmicroelectronics S.a.

Stmicroelectronics (rousset) Sas

Université Joseph Fourier

Université Joseph Fourier - Grenoble

Nicolas Posseme

Olivier Joubert

François Lefloch

Sébastien Barnola

Christian Arvet

Thibaut David

Sébastien Lagrasta

Torsten Lill

A method for activating an exposed layer of a structure including a provision of a structure including an exposed layer, a deposition of a layer based on a material of formula SiYX, with X chosen from among fluorine F and chlorine Cl, and Y chosen from among oxygen O and nitrogen N, a, b and c being non-zero positive integers, a treatment of the layer SiYXby an activation plasma based on at least one from among oxygen and nitrogen, the parameters of the deposition of the layer SiYXbeing chosen so as to obtain a sufficiently low material density such that the layer SiYXis at least partially consumed by the activation plasma.

Method for activating an exposed layer

A method for making a device with superconductor qubit(s) including at least one JoFET formed by the following steps of: and wherein the materials and the thicknesses of the protective dielectric portion and of the protective dielectric layer are selected so as to prevent the laser pulse from reaching the first region, and melting the semiconductor of the second regions which forms, after cooling, a recrystallised semiconductor material having superconductor material properties.

Method for making an electronic device with superconductor qubit(s) including at least one JoFET

A quantum device includes a transistor pattern carried by a substrate, the transistor pattern having, in a stack, a gate dielectric and a superconducting gate on the gate dielectric. The superconducting gate has a base, a tip, sidewalls and at least one superconducting region made of a material that has, as a main component, at least one superconducting element. The superconducting gate also includes a basal portion having a dimension, taken in a first direction of a basal plane that is smaller than a dimension of the tip of the superconducting gate. The transistor pattern further includes at least one dielectric portion made of a dielectric material in contact with the top face of the gate dielectric and the basal portion of the superconducting gate.

Quantum device and method for producing the same

Growing community of inventors

Grenoble, France

Nicolas Posseme