X-fab France

Nicolas Pons

Pascal Costaganna

Francis Domart

Philippe Trovati

A transistor carried by a substrate comprising an active layer, the transistor comprising: at least one source area and at least one drain area; at least one electrical contact area; at least one conduction channel; at least one gate; wherein the gate comprises: a longitudinal portion; a transverse portion extending on either side of a portion of the active layer and comprising: at least a first portion extending beyond a portion of a first side of the portion of the active layer on a first extension dimension I; at least a second portion extending beyond a portion of a second side of the portion of the active layer on a second extension dimension I; and in that: I&#x3e;Iwith I&#x2260;0.

Transistor and its manufacturing process

A method of forming a transistor from a stack of layers comprising at least one insulating layer topped by at least one active layer and at least one first and one second insulating trench defining in the active layer a reception area for receiving the transistor, the transistor comprising a conduction channel formed at least partially in the active layer, the method comprising at least the following steps: forming a grid stack extending over at least the conduction channel; forming a source zone and a drain zone; wherein the formation of the grid stack is carried out in such a way as to provide at least a first and a second portion of the reception zone, not covered by the grid stack.

Growing community of inventors

Draveil, France

Nicolas Pons