Centre National De La Recherche Scientifique

Picogiga International Sas

Centre National De La Recherche Scientifique-cnrs

Nicolas Pierre Grandjean

Jean Massies

Fabrice Semond

Benjamin G&eacute;rard Pierre Damilano

Mathieu Leroux

Jean Claude Massies

Benjamin Gérard Pierre Damilano

The invention concerns a monocrystalline coating crack-free coating of gallium nitride or mixed gallium nitride and another metal, on a substrate likely to cause extensive stresses in the coating, said substrate being coated with a buffer layer, wherein: at least a monocrystalline layer of a material having a thickness ranging between 100 and 300 nm, preferably between 200 and 250 nm, and whereof crystal lattice parameter is less than the crystal lattice parameter of the gallium nitride or of the mixed gallium nitride with another metal, is inserted in the coating of gallium nitride or mixed gallium nitride with another metal. The invention also concerns the method for preparing said coating. The invention further concerns electronic and optoelectronic devices comprising said coating.

Preparation method of a coating of gallium nitride

Thin semiconductor GaInN layer, method for preparing same, light-emitting diode comprising said layer and illumination device

A device includes a silicon substrate provided with a coating including at least one stacking constituted by a plane of GaN or GaInN quantum dots emitting visible light at room temperature in a respective layer of AIN or GaN. The method of making the device is also disclosed. The device can be incorporated in electroluminescent devices and exchange devices, emitting white light in particular.

Stacking of GaN or GaInN quantum dots on a silicon substrate, their preparation procedure electroluminescent device and lighting device comprising these stackings

Growing community of inventors

Nice, France

Nicolas Pierre Grandjean