Murata Manufacturing Co., Ltd.

Nicolas Normand

Frédéric Voiron

Stéphane Bouvier

Emmanuel Lefeuvre

An electrical device that includes a substrate; a 3D capacitor including a capacitor dielectric region of a dielectric material, a capacitor electrode region of a conductive material, the capacitor dielectric region and the capacitor electrode region being arranged at least partially inside a cavity extending in the substrate from a top face of the substrate; and a surrounding through opening in the substrate and which surrounds a surrounded substrate region, the 3D capacitor being outside of the surrounded substrate region, the surrounding through opening extending from the top face to a bottom face of the substrate, wherein inside the surrounding through opening a surrounding dielectric region of the dielectric material and a surrounding conductive region of the conductive material are arranged.

Electrical device comprising a 3D capacitor and a region surrounded by a through opening

The invention concerns an implementable semiconductor device that includes an electrode configured to be in contact with biological tissue and at least one capacitor, and wherein the capacitor includes a capacitor electrode having a first surface facing and in contact with the electrode configured to be in contact with biological tissue.

Implementable semiconductor device, comprising an electrode and capacitor, and corresponding manufacturing method

An integrated resistor-capacitor (RC) structure () is disclosed. The integrated RC structure includes a vertical capacitor () and a resistive element () disposed above the capacitor. The integrated RC structure uses a low ohmic substrate () to ensure a good ground return path for the capacitor. Further, a resistivity of the substrate is configured such that a top plate () of the capacitor provides a reference ground above a predefined frequency. The impedance of the resistive element () is matched, relative to the reference ground, to a predetermined resistance. As such, the resistance of the resistive element () can be controlled to provide an impedance controlled RC structure over a range of operating frequencies.

Growing community of inventors

Herouville Saint Clair, France

Nicolas Normand