Applied Materials, Inc.

Nicolas Louis Gabriel Breil

Siddarth A Krishnan

Shashank Sharma

Lan Yu

Kai Wu

Tyler Sherwood

Deepak Kamalanathan

Ryan Scott Smith

Archana Kumar

Kai Ng

Ria Someshwar

Joshua S Holt

Exemplary semiconductor processing methods include forming a via in a semiconductor structure. The via may be defined in part by a bottom surface and a sidewall surface formed in the semiconductor structure around the via. The methods may also include depositing a tantalum nitride (TaN) layer on the bottom surface of the via. In embodiments, the TaN layer may be deposited at a temperature less than or about 200° C. The methods may still further include depositing a titanium nitride (TiN) layer on the TaN layer. In embodiments, the TiN layer may be deposited at a temperature greater than or about 300° C. The methods may additionally include depositing a fill-metal on the TiN layer in the via. In embodiments, the metal may be deposited at a temperature greater than or about 300° C.

Formation of metal vias on metal lines

Exemplary methods of forming a semiconductor structure may include forming a layer of metal on a semiconductor substrate. The layer of metal may extend along a first surface of the semiconductor substrate. The semiconductor substrate may be or include silicon. The methods may include performing an anneal to produce a metal silicide. The methods may include implanting ions in the metal silicide to increase a barrier height over 0.65 V.

Methods of forming doped silicide power devices

Exemplary methods of forming a memory structure may include forming a layer of a transition-metal-and-oxygen-containing material overlying a substrate. The substrate may include a first electrode material. The methods may include annealing the transition-metal-and-oxygen-containing material at a temperature greater than or about 500&#xb0; C. The annealing may occur for a time period less than or about one second. The methods may also include, subsequent the annealing, forming a layer of a second electrode material over the transition-metal-and-oxygen-containing material.

Annealing processes for memory devices

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Alviso, CA, United States of America

Nicolas Louis Gabriel Breil