Alcatel

Tegal Corporation

Spts Technologies Limited

Nicolas Launay

Michel Puech

Maxine Varvara

Maxime Varvara

A method of plasma etching one or more features in a silicon substrate includes performing a main etch using a cyclical etch process in which a deposition step and an etch step are alternately repeated, and performing an over etch to complete the plasma etching of the features. The over etch includes one or more etch steps of a first kind and one or more etch steps of a second kind, each of the etch steps of the first and second kind include etching by ion bombardment of the silicon substrate. The ion bombardment during the one or more etch steps of the second kind has an inward inclination with respect to ion bombardment during the one or more etch steps of the first kind.

Method for plasma etching a workpiece

The present invention provides apparatus for controlling the operation of plasma etching a semiconductor substrate by an alternating etching method, the apparatus comprising:

Apparatus and a method for controlling the depth of etching during alternating plasma etching of semiconductor substrates

The present invention consists in a method of plasma treatment of a semiconductor substrate in a process chamber connected to a vacuum line via a valve, said treatment including a plurality of cycles comprising at least one etching step during which an etching gas is introduced alternating with at least one passivation step during which a passivation gas is introduction into said chamber, which method includes the following operations:

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Annecy, France

Nicolas Launay