Automotive Coalition for Traffic Safety, Inc.

Advanced Photonics Applications Gmbh

Nicolas Koslowski

Johannes Koeth

Wolfgang Zeller

Derek Treese

Michael Legge

Tim Koslowski

The invention relates to a method for producing a semiconductor laser comprising the method steps: generating a lateral structure layer, at least in the material abrasion areas, a basic selection of the laser modes amplified or amplifiable through stimulated emission taking place via the lateral structure layer; and generating an optical element for defining the phasing of the amplified or amplifiable laser modes, the optical element being generated in such a manner that it has a distance d to an end of the lateral structure layer in the longitudinal direction of the waveguide ridge, distance d fulfilling the condition m being a natural number (m∈) and λbeing the effective wavelength in the material.

Single mode semiconductor laser with phase control

A system for non-invasively measuring an analyte in a vehicle driver and controlling a vehicle based on a measurement of the analyte. At least one solid-state light source is configured to emit different wavelengths of light. A sample device is configured to introduce the light emitted by the at least one solid-state light source into tissue of the vehicle driver. One or more optical detectors are configured to detect a portion of the light that is not absorbed by the tissue of the vehicle driver. A controller is configured to calculate a measurement of the analyte in the tissue of the vehicle driver based on the light detected by the one or more optical detectors, determine whether the measurement of the analyte in the tissue of the vehicle driver exceeds a pre-determined value, and provide a signal to a device configured to control the vehicle.

System for non-invasive measurement of an analyte in a vehicle driver

The present invention provides a widely tunable, single mode emission semiconductor laser which comprises a semiconductor substrate, a first linear ridge waveguide which forms a first coupled cavity, and a second linear ridge waveguide which forms a second coupled cavity, with the first coupled cavity being separated from the second coupled cavity by a gap. The first and second coupled cavities comprise p-contacts and n-contacts for allowing laser currents I, Ito be injected into the first and second coupled cavities, respectively. The first and second coupled cavities comprise first and second heating resistors, respectively, for heating the first and second coupled cavities when heating currents H, Hare applied to the first and second heating resistors, respectively. A heating resistor is provided for heating the semiconductor substrate of the semiconductor laser so as to regulate the base temperature T of the chip (i.e., the semiconductor substrate).

Widely tunable, single mode emission semiconductor laser

Systems and methods are described herein to thermally regulate laser diodes. During operation, the structure of a laser diode may generate heat, which will affect the stability and accuracy of the output wavelength of the laser diode. During an OFF stage, the structure of the laser diode will then lose heat, creating a thermal gradient as the laser diode is switched between operation and an OFF state. The systems and methods provide constant average heat and a stable thermal gradient by integrating a laser diode power-coupled supply and a heater onto a heatspreader, such that the output wavelength of a coupled laser diode may be stabilized.

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Würzburg, Germany

Nicolas Koslowski