Average Co-Inventor Count = 3.19
ph-index = 15
The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.
Company Filing History:
1. International Business Machines Corporation (177 from 163,671 patents)
2. Stmicroelectronics Gmbh (125 from 2,864 patents)
3. Commissariat a L'energie Atomique Et Aux Energies Alternatives (21 from 3,480 patents)
4. Globalfoundries Inc. (15 from 5,671 patents)
5. Bell Semiconductor, LLC (7 from 8 patents)
6. Stmicroelectronics S.a. (6 from 2,424 patents)
7. Stmicroelectronics (crolles 2) Sas (6 from 748 patents)
8. Commissariat À L'énergie Atomique Et Aux Énergies Alternatives (3 from 984 patents)
9. Nxp B.v. (2 from 5,046 patents)
10. Adeia Semiconductor Bonding Technologies Inc. (2 from 1,847 patents)
11. Renesas Electronics America Inc. (1 from 227 patents)
12. Elpis Technologies Inc. (1 from 51 patents)
13. Adeia Semiconductor Solutions LLC (1 from 17 patents)
282 patents:
1. 12426228 - SRAM with staggered stacked FET
2. 12414328 - Co-integrating gate-all-around nanosheet transistors and comb-nanosheet transistors
3. 12408368 - Method of making a semiconductor device using a dummy gate
4. 12402408 - Stacked FETS including devices with thick gate oxide
5. 12336294 - Gate-cut and separation techniques for enabling independent gate control of stacked transistors
6. 12317555 - Gate-all-around nanosheet field effect transistor integrated with fin field effect transistor
7. 12310100 - Dielectric reflow for boundary control
8. 12278234 - Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methods
9. 12268020 - Source or drain template for reducing strain loss in spaced-apart nanosheet channels
10. 12261173 - Semiconductor device with strained channel
11. 12237325 - Three-dimensional field effect device
12. 12211936 - Strained-channel fin FETs
13. 12191309 - Method to induce strain in finFET channels from an adjacent region
14. 12166042 - Stacked nanosheet gate-all-around device structures
15. 12154945 - Backside CMOS trench epi with close N2P space