Stmicroelectronics S.a.

Stmicroelectronics (crolles 2) Sas

Stmicroelectronics (rousset) Sas

Nicolas Hotellier

Cyril Fellous

Raul Andres Bianchi

Alexis Farcy

Sebastien Petitdidier

Christophe Aumont

Francois Roy

Richard P Fournel

François Roy

Pierre Bar

Sylvain Joblot

Benoit Froment

Frédéric Gianesello

Vincent Fiori

Benoît Froment

François Guyader

Yannick Sanchez

Sébastien Petitdidier

Christophe Cowache

A method for fabricating a semiconductor chip includes forming a plurality of conducting pads at a front face of a substrate, thinning a rear face of the substrate, etching openings under each conducting pad from the rear face, depositing a layer of a dielectric on walls and a bottom of the openings, forming a conducting material in the openings, and forming a conducting strip on the rear face. The conducting strip is electrically connected to the conducting material of each of the openings. The etching is stopped when the respective conducting pad is reached.

Chip protected against back-face attacks

A semiconductor chip includes at least two insulated vias passing through the chip from the front face to the rear face in which, on the side of the rear face, the vias are connected to one and the same conducting strip and, on the side of the front face, each via is separated from a conducting pad by a layer of a dielectric.

An electronic component includes a semiconductor layer having a first surface coated with a first insulating layer and a second surface coated with an interconnection structure. A laterally insulated conductive pin extends through the semiconductor layer from a portion of conductive layer of the interconnection structure all the way to a contact pad arranged at the level of the first insulating layer.

Electronic component and method of manufacturing the same

An electronic device has a rear plate that includes a substrate rear layer, a substrate front layer and a dielectric intermediate layer between the substrate rear and front layers. An electronic structure is on the substrate front layer and includes electronic components and electrical connections. The substrate rear layer includes a solid local region and a hollowed-out local region. The hollowed-out local region extends over all of the substrate rear layer. The substrate rear layer does not cover at least one local zone of the dielectric intermediate layer corresponding to the hollowed-out local region.

Electronic device with hollowed-out rear plate

A method for forming an integrated circuit including the steps of: a) forming openings in a front surface of a first semiconductor wafer, the depth of the openings being smaller than 10 &#x3bc;m, and filling them with a conductive material; b) forming doped areas of components in active areas of the front surface, forming interconnection levels on the front surface and leveling the surface supporting the interconnection levels; c) covering with an insulating layer a front surface of a second semiconductor wafer, and leveling the surface coated with an insulator; d) applying the front surface of the second wafer coated with insulator on the front surface of the first wafer supporting interconnection levels, to obtain a bonding between the two wafers; e) forming vias from the rear surface of the second wafer, to reach the interconnection levels of the first wafer; and f) thinning the first wafer to reach the openings filled with conductive material.

Method for forming an integrated circuit

A microelectronic device includes a color filter equipped with a plurality of filtering elements, including several filtering elements. The device includes at least one first zone located inside a cavity and includes a first group of filtering elements having a first critical dimension, and at least one second zone at the periphery of the cavity, including a second group of filtering elements having a second critical dimension that is different from the first critical dimension.

Production of an improved color filter on a microelectronic imaging device comprising a cavity

A photodetector including a photodiode formed in a semiconductor substrate and a waveguide element formed of a block of a high-index material extending above the photodiode in a thick layer of a dielectric superposed to the substrate, the thick layer being at least as a majority formed of silicon oxide and the block being formed of a polymer of the general formula RRRSiOSiRRRwhere R, R, and Rare any carbonaceous or metal substituents and where one of R, R, or Ris a carbonaceous substituent having at least four carbon atoms and/or at least one oxygen atom.

Monolithic photodetector

Growing community of inventors

Jarrie, France

Nicolas Hotellier