Stmicroelectronics (rousset) Sas

Stmicroelectronics (grenoble 2) Sas

Nicolas Borrel

Jimmy Fort

Clement Champeix

Mathieu Pierre Lisart

Alexandre Sarafianos

Francesco La Rosa

Nicolas Demange

Thierry Soude

Maud Pierrel

Jean-Max Dutertre

Mathieu Dumont

Clément Champeix

An embodiment electronic circuit power supply device is configured to: flow, through a first conductor connected to a node, a first current that is an image of a second current consumed by the electronic circuit; flow a third current through a second conductor connected to the node; regulate a potential of the node to a constant value by acting on the third current; flow a fourth constant current through a third conductor connected to the node; and consume a fifth current that is an image of the third current.

Device and method for protecting confidential data in an electronic circuit powered by a power supply

A physically unclonable function device includes a set of diode-connected MOS transistors having a random distribution of respective threshold voltages. A first circuit is configured to impose, on each first transistor, a fixed respective gate voltage regardless of the value of a current flowing in this first transistor. A second circuit is configured to impose, on each second transistor, a fixed respective gate voltage regardless of the value of a current flowing in this second transistor. A current mirror stage is coupled between the first circuit and the second circuit and is configured to deliver the reference current from a sum of the currents flowing in the first transistors. A comparator is configured to deliver a signal whose level depends on a comparison between a first current obtained from a reference current based on the first transistors and a second current of the second transistors.

Physically unclonable function device

The present invention concerns an electronic circuit power supply device, configured to: flow, through a first conductor connected to a node, a first current that is an image of a second current consumed by the electronic circuit; flow a third current through a second conductor connected to the node, a first branch of a current mirror conducting the third current; flow a fourth constant current through a third conductor connected to the node; consume a fifth current that is an image of the third current; and regulate a potential of the node by acting on a gate potential of a transistor electrically in series with a second branch of the current mirror.

Device and method for electronic circuit power

An embodiment integrated circuit includes a first electromagnetic pulse detection device that comprises a first loop antenna formed in an interconnection structure of the integrated circuit, a first end of the first antenna being connected to a first node of application of a power supply potential and a second end of the antenna being coupled to a second node of application of the power supply potential, and a first circuit connected to the second end of the first antenna and configured to output a first signal representative of a comparison of a first current in the first antenna with a first threshold.

Electromagnetic pulse detection

The physically unclonable function device (DIS) comprises a set of MOS transistors (TR, TR) mounted in diodes having a random distribution of respective threshold voltages, and comprising N first transistors and at least one second transistor. At least one output node of the function is capable of delivering a signal, the level of which depends on the comparison between a current obtained using a current circulating in the at least one second transistor and a current obtained using a reference current that is equal or substantially equal to the average of the currents circulating in the N first transistors. A first means (FM) is configured to impose on each first transistor a respective fixed gate voltage regardless of the value of the current circulating in the first transistor, and a second means (SM) is configured to impose a respective fixed gate voltage on each second transistor regardless of the value of the current circulating in the second transistor.

An electronic device includes a starting circuit configured to compare a value representative of the power supply voltage with a threshold, wherein the circuit includes a generator of a current proportional to temperature.

Device comprising a start-up circuit, and method of manufacturing thereof

A method of protecting a first chip in a multi-chip stack includes determining an electrical characteristic of a conductive loop. The conductive loop extends over a top portion of the first chip. The conductive loop also extends through the first chip and within a top portion of a second chip. The top portion of the second chip is adjacent to a bottom portion of the first chip. The method further includes determining whether the electrical characteristic indicates that an attack is being made to determine contents or operation of the first chip.

Device comprising a stack of electronic chips

A circuit for detecting a glitch in power supply includes a detection circuit to detect the glitch in a DC supply voltage of the power supply when a magnitude in the glitch in a DC supply voltage of the power supply exceeds a detection threshold, wherein the detection threshold is a function of the DC supply voltage, and wherein the detection circuit comprises a low pass filter, a control circuit coupled to the low pass filter, and a current mirror circuit coupled to the control circuit having an output for providing a logic signal indicative of a detected glitch.

Glitch detection of a DC voltage

A secure electronic chip including a plurality of biased semiconductor wells and a well biasing current detection circuit. Each of the wells includes a transistor and a bias contact electrically isolated from the transistor. The detection circuit is electrically coupled to each bias contact and is configured to detect a bias current passing through the bias contact that is indicative of an attempt to tamper with the electronic chip.

Secure electronic chip

A power supply voltage is monitored by a monitoring circuit including a variable current generator and a band gap voltage generator core receiving the variable current and including a first node and a second node. A control circuit connected to the first and second nodes is configured to deliver a control signal on a first output node having a first state when an increasing power supply voltage is below a first threshold and having a second state when increasing power supply voltage exceeds the first threshold. The first threshold is at least equal to the band gap voltage. An equalization circuit also connected to the first and second nodes with feedback to the variable current generator generates the bandgap voltage at a second output node. The control signal operates to control actuation of the equalization circuit.

Electronic circuit with device for monitoring a power supply using a trip threshold chosen from a range of voltages around a band gap voltage

A power supply voltage is monitored by a monitoring circuit including a band gap voltage generator core including a first node and a second node. A control circuit connected to the first and second nodes is configured to deliver a control signal on a first output node having a first state when an increasing power supply voltage is below a first threshold and having a second state when increasing power supply voltage exceeds the first threshold. The first threshold is at least equal to the band gap voltage. An equalization circuit also connected to the first and second nodes with feedback to the band gap voltage generator core generates the bandgap voltage at a second output node. The control signal operates to control actuation of the equalization circuit.

Electronic circuit with device for monitoring a power supply

An electronic chip includes a doped semiconductor substrate of a first conductivity type, a doped buried layer of a second conductivity type overlying the substrate, and a first doped well of the first conductivity type overlying the buried layer. Circuit components can be formed at a top surface of the first doped well and separated from the buried layer. A current detector is coupled to the buried layer and configured detect a bias current flowing into or out of the buried layer.

Protected electronic chip

A device includes a first chip having a front side and a back side. A second chip is stacked with the first chip and located on the back side of the first chip. A first loop includes first and second through vias located in the first chip. Each through via has a first end on the front side of the first chip and a second end on the back side of the first chip. The first loop also includes a first track that connects the first ends of the first and second through vias is located in the first chip on the front side thereof and a second track that connects the second ends of the first and second through vias is located in the second chip. A detection circuit can detect an electrical characteristic of the first loop.

An integrated circuit including a plurality of first semiconductor strips of a first conductivity type and of second semiconductor strips of a second conductivity type arranged in alternated and contiguous fashion on a region of the second conductivity type, including for each of the first strips: a plurality of bias contacts; for each bias contact, a switch capable of applying a potential on the bias contact; two detection contacts arranged at the ends of the first strip; and a detection circuit having its activation causing the turning off of the switches and the comparison with a threshold of the resistance between the detection contacts.

Growing community of inventors

Martigues, France

Nicolas Borrel