L'air Liquide, Soci&#xe9;t&#xe9; Anonyme Pour L'etude Et L'exploitation Des Proc&#xe9;d&#xe9;s Georges Claude

American Air Liquide, Inc.

L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des

Centre National De La Recherche Scientifique

Technische Universiteit Eindhoven

Nicolas Blasco

Jean-Marc Girard

Christian Dussarrat

Audrey Pinchart

Antonio Sanchez

Christophe Lachaud

Yumin Liu

Grigory Nikiforov

Feng Li

Satoko Gatineau

Andreas Zauner

Sonia Plaza

Venkateswara R Pallem

Glenn Kuchenbeiser

Jooho Lee

Rocio Alejandra Arteaga Muller

Raphael Rochat

Ziyun Wang

Peng Zhang

Clément Lansalot-Matras

Gennadiy Itov

Manish Khandelwal

Vincent M Omarjee

Zhiwen Wan

Sean Kerrigan

Cole Ritter

Sunao Kamimura

Mikiko Kimura

Anthony Correia-Anacleto

Santiago Marques-Gonzalez

Larry Kit-wing Leung

Masahiro Suzuki

Guillaume Husson

Kohei Tarutani

Fabrizio Marchegiani

Changhee Ko

Wilhelmus Mathijs Marie Kessels

Claudia Fafard

Stefan Wiese

Takashi Teramoto

Stéphane Daniele

Antony Correia-Anacleto

Nicolas Merle

Stéphane Danielle

Rocio Arteaga

Zhengning Gao

Keishi Yamamoto

Masato Hirai

Alain Madec

Gijs Dingemans

Stephen Potts

Antony Correia - Anacleto

A genus of rare earth containing chemicals is disclosed. These rare earth containing chemicals are suitable for use in sequential vapor deposition processes to form rare earth fluoride or rare earth oxyfluoride films. Such films may be used to protect materials and devices from corrosive chemicals.

Devices having a rare earth (oxy) fluoride coating for improved resistance to corrosive chemical environments and methods for making and using these devices

Methods for forming a Li-containing film, islet or cluster on a substrate comprise the steps of introducing a vapor of a silicon-free lithium precursor into a reactor and depositing at least part of the silicon-free lithium precursor onto the substrate to form the Li-containing film, islet or cluster using a vapor deposition method.

Lithium precursors for deposition of lithium-containing layers, islets or clusters

A method for synthesis of Pt(PF)(CAS #19529-53-4), the method comprising the steps of forming a suspension of a platinum precursor Pt(Hal), wherein Hal=F, Cl, Br or I, and a metal powder in a solvent, introducing excess amount of PFinto the suspension of Pt(Hal)and the metal powder, forming a soluble reaction intermediate Pt(Hal)(PF)in the solvent through a reaction between PFand Pt(Hal), wherein Hal=F, Cl, Br or I, x=1, 2, under a reaction condition, and forming Pt(PF)from a reaction between Pt(Hal)(PF), the metal powder and the excess of PFin the solvent.

Low pressure process for synthesis of Pt(PF)involving a soluble intermediate and storage of obtained Pt(PF)

Disclosed is a SAM forming composition comprising a SAM monomer or precursor having a backbone with a surface reactive group, wherein the backbone contains no Si—C bonds and is selected from the group consisting of a Si—C bond-free polysilane and a trisilylamine. The surface reactive groups are disclosed for the surface to be covered being a dielectric surface and a metal surface, respectively. A process of forming a SAM on a surface and a process of forming a film on the SAM are also disclosed.

Silicon-based self-assembling monolayer compositions and surface preparation using the same

Disclosed are Group 6 transition metal-containing thin film forming precursors to deposit Group 6 transition metal-containing films on one or more substrates via vapor deposition processes.

Group 6 transition metal-containing compositions for vapor deposition of group 6 transition metal-containing films

A process for gas phase deposition of a metal or metal nitride film on a surface substrate comprises: reacting a metal-oxo or metal oxyhalide precursor with an oxophilic reagent in a reactor containing the substrate to deoxygenate the metal-oxo or metal oxyhalide precursor, and forming the metal or metal nitride film on the substrate through a vapor deposition process. The substrate is exposed to the metal oxyhalide precursor and the oxophilic reagent simultaneously or sequentially. The substrate is exposed to a reducing agent sequentially after deoxygenation.

Reagents to remove oxygen from metal oxyhalide precursors in thin film deposition processes

A preprocessing method comprises a sintering step of heating a solid material container filled with a solid material using a temperature which is lower than either the melting point or sublimation of the solid material, whichever is lower, and crystallizing at least part of the solid material, and an impurity removal step of heating the solid material container filled with the solid material using a temperature which is lower than either the melting point or sublimation of the solid material, whichever is lower, and removing at least part of the impurities included in the solid material.

Preprocessing method for solid material, and solid material product filled with solid material manufactured using said solid material preprocessing method

A method for synthesizing Pt(PF)(CAS # 19529-53-4) comprises dissolving a platinum compound having a general formula, Pt(Hal)(PF), in an anhydrous solvent forming a Pt(Hal)(PF)solution, wherein Hal=F, Cl, Br or I, x=1, 2, adding a metal powder and excess amount of PFinto the Pt(Hal)(PF)solution, and forming Pt(PF)through a reaction between Pt(Hal)(PF), PFand the metal powder under a reaction condition. The method further comprises synthesizing Pt(Hal)(PF)through the steps of dispersing a platinum precursor having a general formula, Pt(Hal), into the anhydrous solvent forming a suspension of Pt(Hal), wherein Hal=F, Cl, Br or I, introducing PFinto the suspension of Pt(Hal), and forming the solution of the platinum compound Pt(Hal)(PF)in the anhydrous solvent through a reaction of PFand Pt(Hal).

A process of conditioning tungsten pentachloride to form specific crystalline phases are disclosed. The specific crystalline phases permit stable vapor pressures over extended periods of time during vapor deposition and etching processes.

Tungsten pentachloride conditioning and crystalline phase manipulation

To provide a film forming material and a film forming process for forming, at a lower temperature, a Ge-containing Co film including a desired amount of Ge. A film forming material for forming a Ge-containing Co film according to the invention is represented by either formula (1) or formula (2) below RRRGe&#x2014;Co(CO)(1) (where R, Rand Rare each independently hydrogen, a nonaromatic hydrocarbon group, a halogeno group or a halogenated nonaromatic hydrocarbon group; however, the nonaromatic hydrocarbon group excludes a crosslinked nonaromatic hydrocarbon group, and the halogenated nonaromatic hydrocarbon group excludes a crosslinked halogenated nonaromatic hydrocarbon group) Co(CO)RRGe&#x2014;Co(CO)(2) (where Rand Rare each independently hydrogen, a nonaromatic hydrocarbon group, a halogeno group or a halogenated nonaromatic hydrocarbon group; however, the nonaromatic hydrocarbon group excludes a crosslinked nonaromatic hydrocarbon group, and the halogenated nonaromatic hydrocarbon group excludes a crosslinked halogenated nonaromatic hydrocarbon group).

Ge-containing Co-film forming material, Ge-containing Co film and film forming method thereof

Disclosed are methods of synthesizing and using Titanium-containing film forming compositions comprising titanium halide-containing precursors to deposit Titanium-containing films on one or more substrates via vapor deposition processes.

Titanium-containing film forming compositions for vapor deposition of titanium-containing films

Conditioning of tungsten pentachloride to form specific crystalline phases is disclosed. The specific crystalline phases permit stable vapor pressures over extended periods of time during vapor deposition and etching processes.

Methods of synthesizing Si&#x2014;H containing iodosilanes, such as diiodosilane or pentaiododisilane, using a halide exchange reaction are disclosed.

Preparation of Si-H containing iodosilanes via halide exchange reaction

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Grenoble, France

Nicolas Blasco