Commissariat a L'energie Atomique Et Aux Energies Alternatives

International Business Machines Corporation

Université Joseph Fourier - Grenoble

Nicolas Bernier

Tenko Yamashita

Nicolas J Loubet

Shay Reboh

Remi Coquand

Guillaume Audoit

Benedikt Haas

Jean-Luc Rouviere

Loïc Henry

Hugo Dansas

Mathieu Vigouroux

Riccardo Scarazzini

The present disclosure concerns an electron microscopy method, including the emission of a precessing electron beam and the acquisition, at least partly simultaneous, of an electron diffraction pattern and of intensity values of X rays.

Electron microscopy analysis method

Provided are embodiments for a semiconductor device. The semiconductor device includes a nanosheet stack comprising one or more layers, wherein the one or more layers are induced with strain from a modified sacrificial gate. The semiconductor device also includes one or more merged S/D regions formed on exposed portions of the nanosheet stack, wherein the one or more merged S/D regions fix the strain of the one or more layers, and a conductive gate formed over the nanosheet stack, wherein the conductive gate replaces a modified sacrificial gate without impacting the strain induced in the one or more layers. Also provided are embodiments for a method for creating stress in the channel of a nanosheet transistor.

Creation of stress in the channel of a nanosheet transistor

Growing community of inventors

Le Sappey en Chartreuse, France

Nicolas Bernier