Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Nicolas Baier

Laurent Mollard

Johan Rothman

An array of mesa photodiodes, including a useful layer of CdHgTe wherein pads are formed. The array includes a first doped zone having a first N or P doping; and second doped zones having a second P or N doping of a different type from that of the first doping, and each extending on an upper region of a pad. The first doped zone includes at least one first region having a first doping density, located at least under each of the pads; and at least one second region, located between two neighboring pads, and having a second doping density higher than the first doping density, each second region being separated from the closest second doped zone by at least one portion of the first region.

Array of mesa photodiodes with an improved MTF

A device includes a substrate carrying an array of diodes, organized in rows and columns, and a peripheral substrate contact is arranged on at least one side of the array. The substrate includes one or more buried conducting lines electrically connected to the peripheral substrate contact and being positioned between at least two neighboring columns of diodes and/or between at least two neighboring rows of diodes.

Access-resistant diode array device having enhanced stability

The invention relates to a device comprising a substrate supporting a matrix of diodes organized in rows and columns, and a peripheral substrate contact is arranged on at least one side of the matrix, characterized in that the substrate comprises one or several buried conducting lines having no direct electrical connection with the peripheral substrate contact and being positioned between at least two adjacent columns of diodes and between at least two adjacent rows of diodes.

Diode matrix device with enhanced stability

A device including at least one heterostructure p/n diode, including a substrate based on HgCdTe including for each diode: a first part having a first cadmium concentration; a concentrated part, having a second cadmium concentration, greater than the first concentration, forming a heterostructure with the first part; a p+ doped zone situated in the concentrated part and extending into the first part, forming a p/n junction with an n-doped position of the first part, or a base plate; and the concentrated part is only located in the p+ doped zone and forms a substantially constant cadmium concentration well.

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Saint Nazaire les Eymes, France

Nicolas Baier