Stmicroelectronics S.a.

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Commissariat a L'energie Atomique

Stmicroelectronics (crolles 2) Sas

Nicolas Abelé

Fabrice Casset

Pascal Ancey

Thomas Skotnicki

Guillaume Bouche

Stéphane Monfray

Alexandre Talbot

Karim Segueni

A microelectronic pressure sensor comprises a MOSFET transistor adapted with a mobile gate and a cavity between the mobile gate and a substrate. The sensor includes a gate actuator configured to move mobile gate in response to a pressure being exercised. A fingerprint recognition system includes a matrix of such sensors.

Microelectronic pressure sensor

A micro scale includes one substrate forming a first zone constituting a first terminal, one conducting vibrating beam which has two opposite ends affixed on two supporting areas on the substrate, the conductive beam forming a second terminal; wherein the conductive beam is made of polymer gel having metallic microparticles in low quantity so as to avoid any contamination of a biological material to measure, the density of the metallic microparticles being high enough to achieve electrical conduction of the second terminal. A manufacturing process of such a micro scale circuit is also provided.

Electronic circuit for measuring the mass of biological material and process for manufacturing the same

A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an opening of a semiconductor layer covering a substrate, the activation electrode being formed in the semiconductor layer and being level at the opening.

Microresonator

A mechanical micro system comprising a flexible bending beam extending along a direction, and at least one magnetic element for creating a magnetic field. The flexible beam includes: a first circuit having a first topology for generating, in response to one current flowing through the first circuit, a force having an effect on the beam at one particular place so as to cause a first vibratory mode; a second circuit having a second topology for generating, in response to one current flowing through the second circuit, a force having an effect on the beam at one particular second position so as to cause a second vibratory mode.

Microsystem comprising a bending beam and process of manufacture

A Light Modulating sensing MOSFET transistor includes: a substrate receiving light radiation, the substrate having two source and drain areas separated by a channel extending along a first direction; a gate conductive beam extending along a second direction being substantially perpendicular to the first direction, the beam being fixed at each of its two opposite ends on at least one supporting area and being located above the channel area, the gate beam being substantially opaque and flexible so as to perform progressive modulation of the light reaching the channel in accordance with its bending controlled by the difference of voltage between the gate and the bulk and causing the beam to bend and to come closer to the surface of the channel. A process for manufacturing a light Modulating sensing MOSFET transistor is also provided.

Light modulating sensing MOSFET transistor and process for manufacturing the same

A MOS transistor with a deformable gate formed in a semiconductor substrate, including source and drain areas separated by a channel area extending in a first direction from the source to the drain and in a second direction perpendicular to the first one, a conductive gate beam placed at least above the channel area extending in the second direction between bearing points placed on the substrate on each side of the channel area, and such that the surface of the channel area is hollow and has a shape similar to that of the gate beam when said beam is in maximum deflection towards the channel area.

Growing community of inventors

Paris, France

Nicolas Abelé