USA As Represented by Secretary of the Navy

Northrop Grumman Systems Corporation

Martin Marietta Corporation

Nicolas A Papanicolaou

John Bradley Boos

Mario Ancona

Brian R Bennett

Robert R Whitlock

Jeffrey Ming-Jer Yang

James G Champlain

Yeong-Chang Chou

Jay D Crawford

Jane Lee

Tung H Weng

R Andrew McGill

William S Rabinovich

Todd H Stievater

Robert E Bass

Phillip E Thompson

Harry B Dietrich

Gordon W Anderson

Jennifer L Stepnowski

Ingham A Mack

David I Ma

J Bradley Boos

An apparatus in one example comprises an antimonide-based compound semiconductor (ABCS) stack, an upper barrier layer formed on the ABCS stack, and a gate stack formed on the upper barrier layer. The upper barrier layer comprises indium, aluminum, and arsenic. The gate stack comprises a base layer of titanium and tungsten formed on the upper barrier layer.

Antimonide-based compound semiconductor with titanium tungsten stack

A complementary metal oxide semiconductor (CMOS) device in which a single InGaSb quantum well serves as both an n-channel and a p-channel in the same device and a method for making the same. The InGaSb layer is part of a heterostructure that includes a Te-delta doped AlGaSb layer above the InGaSb layer on a portion of the structure. The portion of the structure without the Te-delta doped AlGaSb barrier layer can be fabricated into a p-FET by the use of appropriate source, gate, and drain terminals, and the portion of the structure retaining the Te-delta doped AlGaSb layer can be fabricated into an n-FET so that the structure forms a CMOS device, wherein the single InGaSb quantum well serves as the transport channel for both the n-FET portion and the p-FET portion of the heterostructure.

n- and p-channel field effect transistors with single quantum well for complementary circuits

Micro-opto-mechanical chemical sensors and methods for simultaneously detecting and discriminating between a variety of vapor-phase analytes. One embodiment of the sensor is a photonic microharp chemical sensor with an array of closely spaced microbridges, each differing slightly in length and coated with a different sorbent polymer. The microbridges can be excited photothermally, and the microbridges can be optically interrogated using microcavity interferometry. Other actuation methods include piezoelectric, piezoresistive, electrothermal, and magnetic. Other read-out techniques include using a lever arm and other interferometric techniques.

Micromechanical chemical sensors with multiple chemoselective resonant elements and frequency division multiplexed readout

N- and p-channel field-effect transistors with single quantum well for complementary circuits

Gold, which is the commonly used metallization on .beta.-silicon carbide, is known to degrade at temperatures above 450.degree. C. It also exhibits poor adhesion to silicon carbide. Schottky contacts with platinum metallization have rectifying characteristics similar to contacts with gold metallization. The platinum Schottky contacts remain stable up to 800.degree. C. Adhesion of the platinum deposited at slightly elevated temperatures is also superior to that for gold. Platinum provides a metallization that is physically more rugged and thermally more stable than conventional gold metallization.

Platinum and platinum silicide contacts on .beta.-silicon carbide

Platinum Schottky contacts remaining stable up to 800.degree. C. have been produced. The adhesion of the platinum deposited at slightly elevated temperatures is good. Platinum provides a metallization that is physically rugged and thermally stable. The Schottky contacts are made on B-Silicon carbide.

Method of forming platinum and platinum silicide schottky contacts on

A photoconductive semiconductor device having a source, a drain, and a photosensitive channel therebetween. The channel has a surface layer that is highly doped with respect to the remainder of the channel, compensating at least in part for the channel's surface depletion layer. In this manner, the photosensitivity of the device is increased without disproportionately increasing wasted dark current. In a preferred embodiment, the additional doping of the channel's surface layer is done by ion implantation, and the device is a monolith formed of gallium arsenide.

Dual active layer photoconductor

A low metal resistance ohmic contact alloyed to p InP material having TiW within the contact as a diffusion barrier layer between an underlay of AuZn and an overlay of Au. A process for fabricating an InP JFET containing a gate contact of respective AuZn, TiW, and Au layers and with the gate contact alloyed to p InP material of a semiconductive gate region provides an improved InP JFET having a low resistance metal alloyed ohmic contact to the gate region. Use of the TiW layer in a multilayer contact alloyed to P InP material leads to unique processing and improved InP semiconductor devices.

TiW diffusion barrier for AuZn ohmic contact to P-Type InP

An integrated, planar, single-channel, photodetector-amplifier device is disclosed. The single-channel device includes a photodetector layer and an amplifier layer above the photodetector layer. The photodetector layer is low-doped to give a low dark current and is sufficiently thick to give a high quantum efficiency. The amplifier layer is of a smaller thickness and is a more highly doped material than the photodetector layer, to provide an amplifier having high gain. An insulating layer is included between the photodetector and amplifier layers for electrically isolating the photodetector and amplifier layers. The layers are fabricated on a substrate. Isolation regions are also included for electrically laterally isolating a photodetector, amplifier, and other circuit components comprising the single channel device from each other. An integrated multi-channel photodetector-amplifier array is also disclosed which array comprises a plurality of single-channel photodetector-amplifier devices fabricated on the same substrate with isolation regions created by proton bombardment to electrically laterally isolate the individual circuit channels from each other. The photodetector-amplifier array may be a linear or an area array.

Monolithic multichannel detector amplifier arrays and circuit channels

A low metal resistance ohmic contact alloyed to p InP material having TiW within the contact as a diffusion barrier layer between an underlay of AuZn and an overlay of Au. A process for fabricating an InP JFET containing a gate contact of respective AuZn, TiW, and Au layers and with the gate contact alloyed to p InP material of a semiconductive gate region provides an improved InP JFET having a low resistance metal alloyed ohmic contact to the gate region. Use of the TiW layer in a multilayer contact alloyed to p InP material leads to unique processing and improved InP semiconductor devices.

A TiW diffusion barrier for AuZn ohmic contacts to p-type InP

A Schottky diode and method of making same in which a n+ doped layer, an n oped layer and an undoped layer of a semi-insulating material selected from the group consisting of gallium arsenide, aluminum gallium arsenide and indium phosphide is grown consecutively on a semi-insulating substrate made of the same material. A mesa with acute angled sides is etched on the undoped layer to such a depth that the n doped layer is exposed. A Schottky and ohmic contact are then deposited on opposite sides of the mesa. The exposed n layer is then bombarded with protons at normal incidence.

Method of making planar geometry Schottky diode using oblique

A line imager comprising: a semiconductor body; a planar, transparent piezoelectric body having a main surface overlying and in proximity to the semiconductor body; wave propagation means for propagating acoustic waves on the main surface of the piezoelectric body to create traveling potential wells in the underlying semiconductor body; a traveling potential well path located in the semiconductor, the traveling potential well path beginning at the wave propogation means and extending straight away therefrom; semiconductor depletion means for depleting the semiconductor of majority charge carriers along the traveling potential well path, the depletion means located atop the piezoelectric body; a gate located on the semiconductor body and alongside and parallel to the traveling potential well path and adjoining the semiconductor depletion means; a plurality of sensor pixels for accumulating charge, the sensor pixels located in the semiconductor body, the pixels aligned next to each other and running parallel to, alongside and overlapping the gate so the integrated charge in each sensor pixel will proceed into their respective traveling potential wells when the potential across the gate is lowered, the gate having length at least equal to the length of the plurality of sensor pixels; and a dump gate located on the semiconductor and parallel to and overlapping the plurality of sensor pixels, the plurality of sensor pixels being situated between the dump gate and the gate, the dump gate causing the charge integrated in the plurality of sensor pixels to flow to ground when the potential across the dump gate is lowered, the dump gate being at least as long as the length of the plurality of sensor pixels.

Saw-CTD parallel to serial imager

A device for the high speed recording of photon images and nonrepetitive electrical waveforms which comprises a waveform recorder wherein surface acoustic waves excited in a can be GaAs, not layered piezoelectric-insulator-semiconductor layered structure produce a traveling electric field in the semiconductor substrate. Charges stored in the traveling potential wells and representing the instantaenous amplitude of a waveform to be recorded are transferred at static wells when a gate is dropped. Because each successive traveling well represents a different time instant of the waveform, the different spatial locations of the static wells correspond to different times. The output signal from the static wells can be selectively delayed before application to a display oscilloscope to enable display of the waveform at a rate many times slower than the actual frequency of the signal waveform.

Saw-CTD serial to parallel imager and waveform recorder

A method of making rings which includes the steps of placing tubes into a container, filling the container with a bonding material in liquid form, solidifying the bonding material within the container, slicing the container into wafers and then removing the bonding material from the wafers leaving the rings as a residual product. The wafers can also be metalized in order to metalize the upper and lower faces of the rings embedded therein.

Growing community of inventors

Silver Spring, MD, United States of America

Nicolas A Papanicolaou