Finisar Corporation

Ii-vi Delaware, Inc.

Tyco Electronics Svenska Holdings Ab

Mellanox Technologies, Ltd.

Finisar Sweden Ab

Ii-vi Delware, Inc.

Nicolae Chitica

Andrei Kaikkonen

Marek Grzegorz Chacinski

David Adams

Gary Landry

Jim Tatum

Robert Lewén

Deepa Gazula

Odd Steijer

Theron Jones

Lennart Per Olof Lundqvist

Jürgen Hauenschild

Lennart Lundqvist

Hans Magnus Emil Andersson

David Nidelius

Lukasz Kumanowski

Elisabeth Källén

Åsa Johansson

An electro-absorption modulator (EAM) is configured to include an on-chip AC ground plane that is used to terminate the high frequency RF input signal within the chip itself. This on-chip ground termination of the modulation input signal improves the frequency response of the EAM, which is an important feature when the EAM needs to support data rates in excess of 50 Gbd. By virtue of using an on-chip ground for the very high frequency signal content, it is possible to use less expensive off-chip components to address the lower frequency range of the data signal (i.e., for frequencies less than about 1 GHz).

Broadband electro-absorption optical modulator using on-chip RF input signal termination

A wideband electro-absorption modulating (EAM) device is configured to include a ground shield that functions to minimize the spread of an applied AC voltage beyond the limits of the modulator's electrode. The ground shield includes a grounding electrode disposed in a spaced-apart relationship with the modulator electrode along the ridge of the EAM structure, and a grounding termination used to couple the grounding electrode to a suitable ground location. The ground location may be either on-chip (such as the DC ground of the modulator itself) or off-chip (via an off-chip capacitor, with a wirebond connecting the grounding electrode to the capacitor). The use of a ground shield mitigates the effects that changes in the data rate have on effective length of the modulator as seen by the applied data signal.

Electro-absorption optical modulator including ground shield

A semiconductor laser chip-on-carrier (CoC) device comprising:

Laser carrier-on-chip device

A VCSEL can include: an elliptical oxide aperture in an oxidized region that is located between an active region and an emission surface, the elliptical aperture having a short radius and a long radius with a radius ratio (short radius)/(long radius) being between 0.6 and 0.8, the VCSEL having a relative intensity noise (RIN) of less than &#x2212;140 dB/Hz. The VCSEL can include an elliptical emission aperture having the same dimensions of the elliptical oxide aperture. The VCSEL can include an elliptical contact having an elliptical contact aperture therein, the elliptical contact being around the elliptical emission aperture. The elliptical contact can be C-shaped. The VCSEL can include one or more trenches lateral of the oxidized region, the one or more trenches forming an elliptical shape, wherein the oxidized region has an elliptical shape. The one or more trenches can be trapezoidal shaped trenches.

VCSEL with elliptical aperture having reduced RIN

An integrated optical transceiver, comprising a laser component, comprising an array of VCSEL diodes formed on a laser diode substrate; a laser driving component, comprising laser diode driving circuitry formed on a laser driving circuitry substrate; a photodiode component, comprising an array of photodiodes formed on a photodiode substrate; and a photodiode driving component, comprising photodiode driving circuitry formed on a photodiode driving circuitry substrate; a first heat sink comprising a connected piece of material to transport excess heat away from the integrated optical transceiver and connected to both the laser and photodiode driving components; and an electrically insulating material separating the photodiode substrate from the first heat sink and being air or dielectric material with a relative dielectric constant &#x3b5;&#x3c;10, wherein the electrically insulating material provides a gap having an effective electrical distance of at least 80 &#x3bc;m between the photodiode substrate and the first heat sink.

Integrated optical transceiver

VCSEL with elliptical aperture having reduced rin

The present invention relates to an apparatus for damping arid monitoring emissions from a light emitting device, particularly a vertical cavity surface emitting laser (VCSEL), comprising: a semi transparent substrate, preferably glass; a light emitting device for generating light emission; a damping layer deposited on a surface of the substrate; and a pair of electrodes, each of which being in direct contact with the damping layer. The damping layer is adapted to decrease the power level of the light emission of the light emitting device by absorption, to a desired level, for instance, to a level that meets eye safety limits. In addition, the damping layer is photosensitive to the light emission of the light emitting device, thereby allowing the pair of electrodes to output an electric signal corresponding to the power level of the light emission of the light emitting device.

Apparatus for damping and monitoring emissions from light emitting devices

A photodetector is disclosed. A first layer of the photodetector has a first semiconductor material having a first band gap energy, a first electric field, and a first doping concentration. A second layer has a second semiconductor material having a second band gap energy higher than the first band gap energy, a non-zero second electric field smaller than the first electric field, and a second doping concentration. The second layer is interfaced with the first layer. A region between the first and second layers has a third doping concentration.

High speed photodetector

A digital signal processing method has steps of pre-emphasizing a digital signal, and then processing the pre-emphasized digital signal through a non-linear device. In the pre-emphasizing step, an undershoot is applied to a first level of the digital signal at a positive signal transition or an overshoot is applied to the digital signal at a negative first signal transition.

Method for improving signal quality of a digital signal being transmitted through a non-linear device and apparatus using the same

The present invention relates to a lasing device for use in an optical module. The lasing device comprises a first reflector and a second reflector; a confinement layer adapted to confine current within a current-confining aperture; and an active layer between the first and second reflectors. The active layer comprises a main active region aligned with the current confining aperture and an auxiliary active region surrounding the main active region. The second reflector includes a first reflector region arranged on the current-confining aperture and a second reflector region surrounding the first reflector region. The second reflector region and the first reflector are configured to induce stimulated recombination in the auxiliary active region.

Growing community of inventors

Kista, Sweden

Nicolae Chitica