Koninklijke Philips Corporation N.v.

Nxp B.v.

Mat-tech B.v.

Nicolaas Johannes Anthonius Van Veen

Ronald Dekker

Rob Van Asselt

Rafael Goshen

Remco Henricus Wilhelmus Pijnenburg

Simha Levene

Christoph Herrmann

Roger Steadman Booker

Johannes Wilhelmus Weekamp

Marc Andre De Samber

Johannus Wilhelmus Weekamp

Vincent Adrianus Henneken

Christian Baeumer

Tiemen Poorter

Alphonsus Tarcisius Jozef Maria Schipper

Amir Livne

Jaap Roger Haartsen

David Yogev

Gerard Kums

Antonius Wilhelmus Maria De Laat

Anton Petrus Maria Van Arendonk

Amiaz Altman

Pascal De Graaf

Hendrik Pieter Hochstenbach

Klaus Jurgen Engel

Cornelis Slob

Mohammad Hossain Biglari

Thomas Weiss

Lev Gregorian

Gerardus Franciscus Cornelius Maria Lijten

Hossain Mohammad Biglari

Igor Uman

The present invention generally relates to a radiation detector element wherein a photodiode is transversely fixed to a detector element substrate through at least one connection comprising two fused solder balls, wherein a first of the two fused solder balls contacts the photodiode and a second of the two fused solder balls (contacts the detector element substrate. The invention further relates to a method of transversally attaching two substrates, in particular constructing the above-mentioned radiation detector element. It also relates to an imaging system comprising at least one radiation detector element.

Radiation detector element

A scintillator pack () and a CT X-ray detector array () comprising such scintillator pack () are proposed. The scintillator pack () comprises an array of scintillator pixels (). At a bottom surface () of each scintillator pixel (), an X-ray absorbing encapsulation () is provided. This encapsulation () comprises an electrically insulating highly X-ray absorbing material having an atomic number greater than 60 such as, for example, Bismuth oxide (BiO). The X-ray absorbing encapsulation () is interposed between the scintillator pixels () and an electronic circuit (). The electronic circuit () may be provided as an ASIC in CMOS technology and may therefore be sensitive to X-ray induced damage. The encapsulation () provides for good X-ray protection of such electronic circuit ().

Scintillator pack comprising an X-ray absorbing encapsulation and X-ray detector array comprising such scintillator pack

A detector tile and a detector panel arrangement for providing a seamless detector surface with a continuous pixel array and with a reduced gap appearance includes a detector tile having a flat primary substrate and a surface layer with a circuitry arrangement. The surface layer is arranged on a front side of the primary substrate covering the primary substrate. The circuitry arrangement includes detector pixels providing a pixel array, where a connection opening is provided in the surface layer and the flat primary substrate at least at one edge of the detector tile. The connection opening is leading from the surface layer to the rear of the substrate for guiding electrical connection elements between the front side and a rear of the detector tiles. The connection openings on opposing edges of the detector tile alternate, and the connection openings on adjacent edges of detector tiles alternate.

Seamless tiling to build a large detector

The solder composition comprises particles of a thermodynamically metastable alloy. One of the elements of the alloy will form an intermetallic compound with a metal surface. The solder composition is particularly suitable for use in bumping of semiconductor devices.

Composition of a solder, and method of manufacturing a solder connection

A thermal flow sensor integrated circuit for sensing flow in a channel based on temperature measurements, the integrated circuit having a temperature sensing element () on a front side of the integrated circuit arranged to face the channel, and a bond pad () coupled electrically to the temperature sensing element, for making electrical contact off the integrated circuit, the bond pad being arranged to face away from the channel. By having the bond pad facing away from the channel, the space needed for the bond pad and any connections to it need not extend beyond the temperature sensing element and get in the way of the channel. Hence the temperature sensing element can be located closer to the channel or in the channel to enable measurements with better response time and sensitivity.

Thermal flow sensor integrated circuit with low response time and high sensitivity

An imaging system () includes a radiation sensitive detector array (). The detector array includes at least two scintillator array layers (). The detector array further includes at least two corresponding photosensor array layers (). At least one of the at least two photosensor array layers is located between the at least two scintillator array layers in a direction of incoming radiation. The at least one of the at least two photosensor array layers has a thickness that is less than thirty microns.

Multi-layer horizontal computed tomography (CT) detector array with at least one thin photosensor array layer disposed between at least two scintillator array layers

An electrical contact for a detector, the electrical component, comprising a cadmium tellurium component, a first layer formed onto the cadmium tellurium component, wherein the first layer comprises indium and a contact agent being bonded directly or indirectly to the first layer to be in electrical contact with the first layer. The contact agent may be a stud bump or a conductive adhesive interconnect being bonded indirectly to the first layer via noble metal shielding layer.

Electrical contact for a cadmium tellurium component

An integrated electronic-micro fluidic device an integrated electronic-micro fluidic device, comprising a semiconductor substrate on a first support, an electronic circuit on a first semiconductor-substrate side of the semiconductor substrate, and a signal interface structure to an external device. A micro fluidic structure is formed in the semiconductor substrate, and is configured to confine a fluid and to allow a flow of the fluid to and from the microfluidic structure only on a second semiconductor-substrate side that is opposite to the first semiconductor-substrate side and faces away from the first support.

System-in-package platform for electronic-microfluidic devices

The invention relates to a radiation detector and a method for its production, wherein a series of converter plates () and interconnect layers (), which extend into a border volume (BV) lateral of the converter plates (), are stacked. By filling voids in the border volume (BV) with an underfill material and cutting through the border volume, a contact surface (CS) is generated in which electrical leads () of the interconnect layers () lie free. To allow a good contacting, said leads () are preferably provided with enlargements in the contact surface, for example by bonding wires () to them.

Radiation detector with a stack of converter plates and interconnect layers

A radiation-sensitive detector includes a first substratewith first and second opposing sides. The first side detects incident radiation, and the first substrateproduces a signal indicative of the detected radiation. At least one electrical contactis located on the first substrate. An electrically conductive materialis coupled to the at least one electrical contact. The electrically conductive materialhas a melting point in a range of about seventy-two (72) degrees Celsius to about ninety-five (95) degrees Celsius.

Direct conversion detector

An assembly () is provided comprising a first chip () and a second chip () which are interconnected through solder connections. These comprise, at the first chip, an underbump metallization and a solder bump, and, at the second chip, a metallization. In this case the solder bump is provided as a fluid layer with a contact angle of less than 90&#xb0; C., and an intermetallic compound is formed on the basis of the metallization at the second chip, and at least one element of the composition is applied as the solder bump.

Method of assembly and assembly thus made

The present invention relates to a sensor device for sensing an image of an object, wherein a detection means () for detecting radiation received from the object is supported by a light-emitting semiconductor means () for emitting radiation towards said object during a predetermined operation period of the detection means (). The detection means () can be operated even at low light intensity conditions and at a low power consumption. The detection means () may be a two-side illuminated detection means, wherein one side is supported by the light-emitting semiconductor means () and the other side is a back-etched side with increased sensitivity. A cheap and very small multi-purpose camera or sensor module can thereby be provided.

Dual-mode CMOS imaging sensor with supporting LED

The invention relates to a method of manufacturing a semiconductor device (), whereby an electric element () is attached on or above a carrier plate () which comprises a first layer () of a first material and a second layer () of a second material which differs from the first, which is electrically conducting, which has a smaller thickness than the first layer (), and in which a cavity () is formed that extends at least to the first layer (). The element () is electrically connected to parts () of the carrier plate () at first connection regions (), and an encapsulation is deposited around the element () and in the cavity (). Then so much of the first layer () of the carrier plate () is removed that the cavity () is reached, whereby second connection conductors () are formed from the remaining portion of the carrier plate (). According to the invention, at least one further cavity () is formed in a portion of the carrier plate () surrounded by the cavity () before the encapsulation () is deposited, which further cavity () becomes at least substantially filled with a portion of the encapsulation () during the deposition thereof and, within the second connection regions (), separates a portion (A) thereof from the remaining portion (B) thereof, the smallest dimension of the portion (A) being chosen to be smaller than the smallest dimension of the remaining portion (B) of each second connection region (). The portion (A) may thus be readily provided with solder (A) having a smaller thickness than the solder (B) in the remaining portion of the second connection region (). This is an advantage, for example in the case of surface mounting of the device (). Preferably, the first connection regions () are connected to the portion (A) of the connection region ().

Growing community of inventors

Eindhoven, Netherlands

Nicolaas Johannes Anthonius Van Veen