Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Abb Research Ltd.

Abb Power Grids Switzerland Ag

Nicola Schulz

Munaf Rahimo

Jürgen Häfner

Slavo Kicin

Chunlei Liu

Raffael Schnell

Joachim Wagner

Marcel Rattunde

Amina Hamidi

Benno Rösener

Jan-Henning Fabian

The present invention relates to a semiconductor laser having at least one quantum film in which electron hole pairs can be recombined, having at least two barrier layers between which respectively one of the at least one quantum films is disposed adjacently to these, directly in a planar manner or via respectively one intermediate film, and also having a pump device, the barrier layers having or consisting of AlGaAsSb, with y greater than or equal to zero and less than or equal to one and z less than or equal to one and greater than 0.4, and/or having or consisting of AlGaInAsSb, with z+u+v=1 and z greater than 0.25, the electron hole pairs being able to be produced directly in the quantum film with the pump device.

Infrared semiconductor laser

A semiconductor device which provides a small and simple design with efficient cooling. A first electrically conducting cooling element is in contact with first electrodes of semiconductor elements for forwarding a heat load from the semiconductor elements and for electrically connecting the first electrodes of the semiconductor elements to an external apparatus. A second electrically conducting cooling element is in contact with second electrodes of the semiconductor elements for forwarding a heat load from the semiconductor elements and for electrically connecting the second electrodes of the semiconductor elements to an external apparatus. The semiconductor device includes an interface which is electrically connected to gates of the semiconductor elements for external control of respective states of the semiconductor elements.

Semiconductor device

Growing community of inventors

Turgi, Switzerland

Nicola Schulz