Fei Comapny

The Science and Technology Facilities Council

Nicola Carlo Guerrini

Joeri Lof

Frank Jeroen Pieter Schuurmans

Richard Henderson

Michael Alwin William Stekelenburg

Gerrit Cornelis Van Hoften

Gregory James McMullan

Abdul Raffey Faruqi

Renato Andrea Danilo Turchetta

Renato Turchetta

Iain Sedgwick

In a direct electron detector, backscattering of electrons into the detector volume from below the sensor is prevented. In some embodiments, an empty space is maintained below the sensor. In other embodiments, a structure below the sensor includes geometry, such as multiple high aspects ratio channels, either extending to or from the sensor to trap electrons, or a structure of angled surfaces to deflect the electrons that pass through the sensor.

Backscatter reduction in thin electron detectors

An imaging sensor device has an array of pixel sensors in rows and columns. The array comprises: a plurality of stitching blocks, each comprising a plurality of pixel sensors disposed in at least one row group; and first and second groups of addressing lines, the arrangement of pixel sensors and addressing lines in each stitching block being the same. Row addressing circuitry is disposed along an external edge of the array parallel to the rows of pixel sensors, coupled to the pixel sensors using the first group of addressing lines for performing a row addressing action and group addressing circuitry is disposed along the same edge of the array, coupled to the pixel sensors using at least some of the second group of addressing lines for performing a group addressing action. Each stitching block combines a row addressing action with a group addressing action to select only one row of one row group of one stitching block simultaneously.

Imaging sensor device

Growing community of inventors

Chilton, United Kingdom

Nicola Carlo Guerrini