Globalfoundries U.S. Inc.

Nicki N Mika

Venkatesh P Gopinath

Xiaoli Hu

Thomas Melde

Structures herein include an array of non-volatile memory cells. The non-volatile memory cells include memory bit cells and at least one reference bit cell that is adjacent the memory bit cells. These structures also include at least one reference voltage regulator connected to the reference bit cell, and at least one sense amplifier connected to the memory bit cells and the reference voltage regulator.

Non-volatile memory device with reference voltage circuit including column(s) of reference bit cells adjacent columns of memory bit cells within a memory cell array

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Dresden, Germany

Nicki N Mika