Taiwan Semiconductor Manufacturing Comp. Ltd.

Nick Y M Shen

Hua-Shu Ivan Wu

Kai-Chih Liang

Chia-Shiung Tsai

Yuan-Chih Hsieh

Ming-Chyi Liu

Allen Timothy Chang

Gwo-Yuh Shiau

Mingo Liu

Tsung-Mu Lai

Li-Chun Peng

Fa-Yuan Chang

Tsung-Cheng Huang

Ching-Chung Pai

Chin-Hsiang Ho

Chu-Wei Cheng

An embodiment of a method is provided that includes providing a substrate having a frontside and a backside. A CMOS device is formed on the substrate. A MEMS device is also formed on the substrate. Forming the MEMS device includes forming a MEMS mechanical structure on the frontside of the substrate. The MEMS mechanical structure is then released. A protective layer is formed on the frontside of the substrate. The protective layer is disposed on the released MEMS mechanical structure (e.g., protects the MEMS structure). The backside of the substrate is processed while the protective layer is disposed on the MEMS mechanical structure.

Method of fabricating an integrated CMOS-MEMS device

The present disclosure provide a method of manufacturing a microelectronic device. The method includes forming a top metal layer on a first substrate, in which the top metal layer has a plurality of interconnect features and a first dummy feature; forming a first dielectric layer over the top metal layer; etching the first dielectric layer in a target region substantially vertically aligned to the plurality of interconnect features and the first dummy feature of the top metal layer; performing a chemical mechanical polishing (CMP) process over the first dielectric layer; and thereafter bonding the first substrate to a second substrate.

Process for wafer bonding

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Chu-Pei, Taiwan

Nick Y M Shen