Soraa, Inc.

Soraa Laser Diode, Inc.

Kyocera Sld Laser, Inc.

Nick Pfister

James W Raring

Mathew C Schmidt

Daniel F Feezell

Christiane Poblenz

Yu-Chia Chang

Drew Felker

Phillip Skahan

Matt Schmidt

Philip Chan

Christian Zollner

A method for manufacturing an optical device includes providing a carrier waver, provide a first substrate having a first surface region, and forming a first gallium and nitrogen containing epitaxial material overlying the first surface region. The first epitaxial material includes a first release material overlying the first substrate. The method also includes patterning the first epitaxial material to form a plurality of first dice arranged in an array; forming a first interface region overlying the first epitaxial material; bonding the first interface region of at least a fraction of the plurality of first dice to the carrier wafer to form bonded structures; releasing the bonded structures to transfer a first plurality of dice to the carrier wafer, the first plurality of dice transferred to the carrier wafer forming mesa regions on the carrier wafer; and forming an optical waveguide in each of the mesa regions, the optical waveguide configured as a cavity to form a laser diode of the electromagnetic radiation.

Manufacturable gallium and nitrogen containing single frequency laser diode

A method and device for emitting electromagnetic radiation using semipolar or nonpolar gallium containing substrates is described where the backside of the substrate includes multiple scribes that reduce stray light leaking.

Laser diodes with scribe structures

A method for forming a laser diode structure. The method includes providing a laser diode material having a surface region. A multilayer dielectric mask structure comprising alternating first and second dielectric layers is formed overlying the surface region. The method forms a laser diode structure using the multilayer dielectric mask structure as a mask. The method selectively removes a portion of the first dielectric layer to form one or more undercut regions between the second dielectric layers. A passivation layer overlies the multilayer dielectric mask structure and the undercut region remained intact. The dielectric mask structure is selectively removed, exposing a top surface region of the laser diode structure. A contact structure is formed overlying at least the exposed top surface region.

Self-aligned multi-dielectric-layer lift off process for laser diode stripes

An optical device having a structured active region configured for one or more selected wavelengths of light emissions and formed on an off-cut m-plane gallium and nitrogen containing substrate.

Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates

Growth structures and method for forming laser diodes on {30-31} or off cut gallium and nitrogen containing substrates

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Goleta, CA, United States of America

Nick Pfister