Hitachi Global Storage Technologies Netherlands B.v.

Nick Lara

Ming Jiang

Hung-Chin Guthrie

John Jaekoyun Yang

A solution of ammonium citrate and benzotriazole (BTA) is used to clean thin film magnetic head wafers. When used with brushing, the solution is a highly efficient process for removing particles, such as those generated during chemical-mechanical polishing (CMP), without causing corrosion and roughness. This process may be used on all CMP layers in thin film magnetic head wafer fabrication.

System and method for cleaning chemistry and processing during thin film magnetic head wafer fabrication

The present invention is directed to methods for polishing and cleaning a wafer having CoFeNi structures within alumina fill to achieve corrosion-free, smooth, and planar surface. A preferred chemical mechanical polishing (CMP) method includes a CMP polishing compound including alumina abrasive particulates, 1H-Benzotriazole (BTA), and hydrogen peroxide (HO) in a concentration working range of 4% to 12%. In a preferred embodiment the HOconcentration is approximately 6% and the pH is approximately 4.0 at polishing pressure 6 psi. A cleaning solution for CoFeNi structures in alumina fill of the present invention preferably includes 4-Methyl-1H-Benzotriazole, 5-Methyl-1H-Benzotriazole, hydrogenated 4-Methyl-1H-Benzotriazole, hydrogenated 5-Methyl-1H-Benzotriazole, sodium octanoate, and water.

Chemical mechanical polishing process for 2.45T CoFeNi structures of thin film magnetic heads

The present invention is directed to methods for polishing and cleaning a wafer having CoFeNi structures within alumina fill to achieve corrosion-free, smooth, and planar surface. A preferred chemical mechanical polishing (CMP) method includes a CMP polishing compound including alumina abrasive particulates, 1H-Benzotriazole (BTA), and hydrogen peroxide (HO). A cleaning solution for CoFeNi structures in alumina fill of the present invention preferably includes 4-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, 5-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, hydrogenated 4-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, hydrogenated 5-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, sodium octanoate in a concentration range of from 5% to 10%, and water in a concentration range of from 65% to 95%. The cleaning solution is typically used with DI water to create an applied solution having a range of from 0.1% to 10% by volume of the cleaning solution.

Growing community of inventors

Gilroy, CA, United States of America

Nick Lara