Cree Gmbh

Freescale Semiconductor,inc.

Ideal Industries Lighting LLC

Nicholas W Medendorp

Kurt S Wilcox

Peter Scott Andrews

Paul Kenneth Pickard

Brian L Kinnune

Gary David Trott

William Laird Dungan

S Scott Pratt

Bernd P Keller

Eric J Tarsa

Mario Alberto Castillo

Gerald H Negley

Antony Paul Van De Ven

James Ibbetson

James Michael Lay

Matthias Passlack

Arpan Chakraborty

Ban Poh Loh

Theodore D Lowes

Zongjie Yuan

Olin L Hartin

Long Larry Le

Tao Tong

Mark Youmans

Ronan Letoquin

Ronan P LeToquin

Marcus R Ray

Antony Van De Ven

Fabien Jean-Daniel Rol

Luminaire

Solid state light emitting devices include lumiphor elements that are spatially segregated from electrically activated solid state emitters with an intermediately arranged optical element (including but not limited to a dichroic filter). Curved or faceted optical elements, and curved or faceted reflectors, may be employed. Multiple solid state emitters may be arranged in multiple reflector cups or recesses. Characteristics of optical elements and/or lumiphor elements of such devices may be varied with respect to angular position.

Remote lumiphor solid state lighting devices with enhanced light extraction

Solid state directional lamp

Lamp package

LED lamp

Sideways emission enhancements are described for light emitting diode (LED) lighting solutions having a wide variety of applications. While a typical LED lighting device has a substantial portion of its light emitted near a normal to the semiconductor photonic chip emitting the light, the present approach may suitable provide a compact, easily manufacturable device with good thermal design characteristics and a changed emission pattern without changing the horizontal mounting plane of the semiconductor photonic chip.

Methods and apparatus for directing light emitting diode output light

Lamp packages

The present invention provides a method of passivating an oxide compound disposed on a III-V semiconductor substrate. The method is intended for use with dielectric stacks, gallate compounds, and gallium compounds used in gate quality oxide layers. The method includes heating a semiconductor structure at an elevated temperature of between about 230&#xb0; C. and about 400&#xb0; C. The semiconductor structure is exposed to an atmosphere that is supersaturated with water vapor or vapor of deuterium oxide. The exposure takes place at elevated temperature and continues for a period of time between about 5 minutes to about 120 minutes. It has been found that the method of the present invention results in a semiconductor product that has significantly improved performance characteristics over semiconductors that are not passivated, or that use a dry hydrogen method of passivation.

Method of passivating oxide/compound semiconductor interface

An implant-free enhancement mode metal-oxide semiconductor field effect transistor (EMOSFET) is provided. The EMOSFET has a III-V compound semiconductor substrate and an epitaxial layer structure overlying the III-V compound semiconductor substrate. The epitaxial material layer has a channel layer and at least one doped layer. A gate oxide layer overlies the epitaxial layer structure. The EMOSFET further includes a metal gate electrode overlying the gate oxide layer and source and drain ohmic contacts overlying the epitaxial layer structure.

Enhancement mode metal-oxide-semiconductor field effect transistor

Growing community of inventors

Raleigh, NC, United States of America

Nicholas W Medendorp