Diamond Semiconductor Group, LLC

Varian Semiconductor Equipment Associates, Inc.

Varian Associates, Inc.

Nicholas R White

Edward W Bell

Manny Sieradzki

Anthony Renau

Svetlana Radovanov

Steven Raymond Walther

Charles M McKenna

Douglas A Brown

Philip Harvey

An ion implanter includes an ion source for generating an ion beam, an analyzer for separating unwanted components from the ion beam, a first beam transport device for transporting the ion beam through the analyzer at a first transport energy, a first deceleration stage positioned downstream of the analyzer for decelerating the ion beam from the first transport energy to a second transport energy, a beam filter positioned downstream of the first deceleration stage for separating neutral particles from the ion beam, a second beam transport device for transporting the ion beam through the beam filter at the second transport energy, a second deceleration stage positioned downstream of the beam filter for decelerating the ion beam from the second transport energy to a final energy, and a target site for supporting a target for ion implantation. The ion beam is delivered to the target site at the final energy. In a double deceleration mode, the second transport energy is greater than the final energy for highest current at low energy. In an enhanced drift mode, the second transport energy is equal to the final energy for highest beam purity at low energy.

Ion implanter having two-stage deceleration beamline

An apparatus is provided for one-dimensional magnetic scanning or switching of a charged particle beam. The apparatus can be extended to two dimensions at the cost of added complexity.

Apparatus for magnetically scanning and/or switching a charged-particle beam

Methods and apparatus are provided for scanning a charged particle beam. The apparatus includes scan elements and a scan signal generator for generating scan signals for scanning the charged particle beam in a scan pattern having a scan origin. In one embodiment, the apparatus includes a position controller for positioning the scan elements based on a parameter of the charged particle beam, such as energy. The scan elements may be positioned to achieve a fixed position of the scan origin for different beam energies. In another embodiment, the apparatus includes first and second sets of scan elements and a scan signal controller for controlling the scan signals supplied to the sets of scan elements based on a parameter of the charged particle beam, such as energy. The scan signal controller may control the ratio of the scan signals applied to the sets of scan elements, or may deenergize a set of scan elements, to minimize space charge forces on the charged particle beam that may reduce beam transmission through the apparatus.

Wide dynamic range ion beam scanners

A compact high current broad beam ion implanter employs a high current density source, a bending magnet to steer the beam and straighten trajectories, and a multipole unit extending across the beam path to tailor a precise one-dimensional beam current distribution which yields a uniform implantation dose with a possibly non-uniform workpiece transport assembly. In one embodiment, the multipole unit is a separate magnet assembly positioned adjacent to a output face of the bending magnet, and includes one or more ranks of closely-spaced pole elements, controlled so the drive current or position of each pole element is varied to affect a narrow band of the beam passing over that element. In another embodiment, the bending magnet is an analyzing magnet which directs a desired species through a resolving slit, and a second magnet deflects the resultant beam while rendering it parallel and further correcting it along its width dimension. As with the first embodiment, multipole elements are adjusted to fit the derived profile. Both magnets preferably have relatively large pole gaps, wide input and output faces, and deflect through a small radius of curvature to produce a beam free of instabilities. The multipole elements are adjacent to or incorporated in the dipoles, preferably at a downstream side, and operate to shift beam power along the width dimension, locally adjusting the beam current density to achieve the desired profile. A separate multipole array, such as an electromagnet with blade poles oriented at progressive angles may adjust the entrance beam.

High current ribbon beam ion implanter

A flat workpiece is placed in contact with a flat platen in a vacuum chamber, and is held by a uniformly-distributed force while a small mass flow of gas is introduced along a contour to form a uniform pressure region between the flat workpiece and the platen. Separation of the two surfaces due to aplanarity or surface roughness is less than the gas mean free path, and high rates of heat transfer are obtained uniformly over the area of the workpiece. A scavenging port, located outwardly of the gas introduction contour is differentially pumped to reduce the rate of gas leakage into the chamber. Preferably, pressure is provided by an electrostatic clamp (for non-insulating substrates) or other clamping arrangement which does not occlude the front surface of the workpiece. In the electrostatic clamp, the voltage activation sequence prevents workpiece vibration, while a clamping current sensor immediately detects degree of contact, e.g., due to debris on the platen, and initiates a suitable warning or control. High cooling rates, freedom from bowing or stress, and full utilization of front surface area are all achieved.

Apparatus and method for temperature control of workpieces in vacuum

A compact high current broad beam ion implanter capable of serial processing employs a high current density source, an analyzing magnet to direct a desired species through a resolving slit, and a second magnet to deflect the resultant beam while rendering it parallel and uniform along its width dimension. Both magnets have relatively large pole gaps, wide input and output faces, and deflect through a small radius of curvature to produce a beam free of instabilities. Multipole elements incorporated within at least one magnet allow higher order aberrations to be selectively varied to locally adjust beam current density and achieve the high degree of uniformity along the beam width dimension.

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Wenham, MA, United States of America

Nicholas R White