International Business Machines Corporation

Nicholas Mone, Jr

Tushar Desai

Ellis Craig Hayford

James Spiros Nakos

Alan Michael Chandler

Donald Walter Rakowski

Richard S Ray

Joseph R Greco

Edward D Adams

Nicole Susan Carpenter

Eric J Caprarola

Gary Michael Prescott

Robert E Fields

Robert C Churchill

Edward P Lowe, Jr

An electromagnetic electron reflector, an ion implanter having an electromagnetic reflector and a method of implantation using the ion implanter. The electromagnetic electron reflector includes a frame; permanent magnets within the frame; a center aperture within the frame and electrically isolated by first gaps from the frame and the permanent magnets and fixed in position by dielectric feed throughs, first cup shields integrally formed on the top and bottom edges of the center aperture, the dielectric feed throughs nested within the first cup shields; second cup shields integrally formed on inside surfaces of the top and bottom of the frame, the second cup shields nested within respective first cup shields; entrance and exit apertures attached to the frame and an electrical conductor passing through at least one of the dielectric feed throughs and electrically contacting the center aperture.

Electromagnetic electron reflector

A method of improving the performance of charged beam apparatus. The method including: providing the apparatus, the apparatus comprising: a chamber having an interior surface; a pump port for evacuating the chamber; a substrate holder within the chamber; and a charged particle beam within the chamber, the charged beam generated by a source and the charged particle beam striking the substrate; and positioning one or more liners in contact with one or more different regions of the interior surface of the chamber, the liners preventing material generated by interaction of the charged beam and the substrate from coating the one or more different regions of the interior surface of the chamber.

Removable liners for charged particle beam systems

An apparatus. The apparatus including: a chamber having an interior surface; a pump port for evacuating the chamber; a substrate holder within the chamber; a charged particle beam within the chamber, the charged beam generated by a source and the charged particle beam striking the substrate; and one or more liners in contact with one or more different regions of the interior surface of the chamber, the liners preventing material generated by interaction of the charged beam and the substrate from coating the one or more different regions of the interior surface of the chamber.

A method of improving the performance of a charged beam apparatus. The method including: providing a chamber having an interior surface; providing a pump port for evacuating the chamber; providing a substrate holder within the chamber; forming a charged particle beam within the chamber, the charged beam generated by a source and the charged particle beam striking the substrate; and placing one or more liners in contact with one or more different regions of the interior surface of the chamber, the liners preventing material generated by interaction of the charged beam and the substrate from coating the one or more different regions of the interior surface of the chamber.

A method of reducing foreign material contamination of a substrate in an ion beam system and an ion beam system. The system, including: a vacuum chamber having an ion beam axis; a substrate chamber free to tilt about a tilt axis, the tilt axis orthogonal to and intersecting the ion beam axis; a flexible bellows connecting an opening in the substrate chamber and an opening in the vacuum chamber, both openings co-axially aligned with the ion beam axis, the bellows providing a vacuum seal between the substrate chamber and the vacuum chamber; and a hollow foreign material shield open at a top proximate to the vacuum chamber and a bottom proximate to the substrate chamber, the foreign material shield located between the ion beam axis and the flexible bellows, the top and bottom of the foreign material shield co-axially aligned with the ion beam axis.

Ion beam system

An apparatus for the in-situ detection of ions in a beam of an ion implanter device includes a mass spectrometer device having inner and outer walls and, a system for generating and directing an ion implant beam through the mass spectrometer device. The mass spectrometer device generates a magnetic field for directing ions of the ion implant beam of a desirable type through an aperture for implanting into a semiconductor wafer, and causing ions of undesirable type to collide with the inner or outer wall. For in-situ detection, a detector device is disposed on the inner and outer walls of the mass spectrometer for detecting the undesirable type of ions deflected. In one embodiment, the detector device comprises electronic sensor devices for detecting a concentration of the undesirable type ions which comprise undesirable elements and compounds. In another embodiment, the detector device comprises Faraday cup devices for detecting a concentration of ions of the undesirable type, or, may comprise a moving Faraday device positioned along tracks disposed respectively along the inner and outer wall, the Faraday being driven for reciprocal movement along a respective track. Data is collected from the sensors corresponding to the positions of undesirable ion detection and is processed, in real-time, during wafer processing. In this manner potential contaminants in the ion implant beam may be determined and corrective action may be taken in response.

Ion implanter in-situ mass spectrometer

The operating lifetime of a hot cathode discharge ion source is extended by introducing nitrogen into an ion implantation apparatus after introduction of an ion implantation gas, such as GeF , is stopped. The nitrogen is preferably introduced along with the GeF during implantation as well.

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Essex Junction, VT, United States of America

Nicholas Mone, Jr