Arkema Inc.

Atotech Usa, Inc.

Elf Atochem North America, Inc.

Atofina Chemicals, Inc.

Arkema France

Atotech Deutschland Gmbh

Taminco

Nicholas Michael Martyak

Michael D Gernon

John E McCaskie

Martin Nosowitz

Gary S Smith

Patrick Kendall Janney

Glenn Carroll

Conor M Dowling

Daniel Alford

Gary E Stringer

Scott Charles Schmidt

Noah Eliot Macy

Jianfeng Lou

Paul D Fellenger

Marie M Kasper

Jean-Marie Ollivier

Daniel Alford, Jr

Paul David Fellenger

Gerald P Franco

Disclosed is a solution for an electrochemical process, the solution containing a sulfonic acid and having a low concentration of sulfur compounds, either low or high valence, that are susceptible to reduction and which is intended for use in electrodeposition, batteries, conductive polymers and descaling processes.

High purity electrolytic sulfonic acid solutions

In a process for the aqueous suspension polymerization of vinyl chloride, alone or in mixture with other monomers, in the presence of at least one of dialkylperoxydicarbonate, peroxyester and diacyl peroxide, the polymerization composition according to the invention comprises at least one dialkylhydroxylamine as a shortstopping agent along with a totally or partially hindered phenolic antioxidant.

Process for the polymerization of vinyl chloride

The invention is directed toward improved aqueous hard surface cleaning compositions which include one or more polysulfonic acids The inclusion of one or more polysulfonic acids in a hard surface composition provides for improved removal of insoluble salt deposits resulting from hard water In an embodiment, the invention utilizes a foaming agent fragrance and a thickening agent.

Hard surface cleaner containing polysulfonic acid

The present invention relates to acrylic block polymers, either block copolymers or homopolymers, synthesized by a controlled free-radical process, and their use as low temperature flow modifiers in bio-derived fuel compositions. They are especially useful in modifying the low temperature flow behavior in bio-derived fuels. The acrylic polymers are especially useful as cold filter plugging control additives in bio-derived fuels.

Acrylic polymer low temperature flow modifiers in bio-derived fuels

A stabilized alkyl ester fuel is disclosed. The stabilized alkyl ester fuel comprises alkyl esters, an effective amount of an alkylalkanolamine, and an effective amount of an alkylhydroxylamine. The alkyl ester fuel is stabilized to oxidative degradation of the alkyl esters of unsaturated fatty acids found in alkyl ester fuels.

Use of mixtures of alkylalkanolamines and alkylhydroxylamines as stabilizers for alkyl ester fuels

Methods for the electrolytic preparation of tin coated metals are disclosed. Organic polybasic acids, such as methanedisulfonic acid [CH2(SO3H)2], 1,3-acetonedisulfonic acid [CO(CH2SO3H)2], anhydrides, and their water soluble salts, and mixtures thereof may be used as the electrolyte in the plating process or as the flux in the reflow process. Acetone, gamma-butyrolactone, or a mixture thereof, may be applied to a tin plated surface, either before or after reflow. The methods of the invention produce plated material that is free of blue haze.

High speed tin plating process

Compositions containing unsaturated fatty esters may be stabilized against atmospheric oxidation by the addition of an antioxidant package containing a phenolic oxidant and a nonphenolic oxygen scavenger, which may be a hydroxylamine, an amine N-oxide, an oxime, or a nitrone. If an amine N-oxide is used, it may be used with or without a phenolic antioxidant. Compositions treated in this manner show good resistance to atmospheric oxidation and resultant viscosity increase.

Fatty ester compositions with improved oxidative stability

Disclosed are aqueous solutions for use in high energy, highly efficient electrical energy storage devices. The solutions contain (a) a high purity sulfonic acid with a low concentration of low valent sulfur compounds or higher valent sulfur compounds susceptible to reduction, (b) a metal or metals in an oxidized state that are capable of being reduced to the zero valent oxidation state, (c) a metal that is in an oxidized state that is incapable of being reduced to its metallic state and (d) optionally, a buffering agent and/or conductivity salts.

Zinc lanthanide sulfonic acid electrolytes

A family of slurries useful in modifying exposed surfaces of wafers for semiconductor fabrication are provided along with methods of modifying exposed surfaces of wafers for semiconductor fabrication utilizing such a family of working slurries, and semiconductor wafers. The slurries of the invention are a solution of initial components, the components comprising: a sulfonated zwitterion selected from 2-(N-Morpholino)ethanesulfonic acid, (3-[N-Morpholino])propanesulfonic acid, 2-[(2-Amino-2-oxoethyl)amino]ethanesulfonic acid, Piperazine-N, N'-bis(2-ethanesulfonic acid), 3-(N-Morpholino)-2-hydroxypropanesulfonic acid, N ,N-Bis(2-hydroxyethyl)-2-aminoethanesulfonic acid, 3-(N-Morpholino)propanesulfonic acid, N-(2-Hydroxyethyl)piperazine-N&#x2032;-(2-ethanesulfonic acid), N-Tris(hydroxymethyl)methyl-2 aminoethanesulfonic acid, 3-[N ,N-Bis(2-hydroxyethyl)amino]-2-hydroxypropanesulfonic acid, 3-[N-Tris(hydroxymethyl)methylamino)-2-hydroxypropanesulfonic acid, N-(2-hydroxyethyl)piperazine-N&#x2032;-(2-hydroxypropanesulfonic acid), Piperazine-N ,N&#x2032;-bis(2-hydroxypropanesulfonic acid), N-(2-Hydroxyethyl)piperazine-N&#x2032;-(3-propanesulfonic acid), N-Tris(hydroxymethyl)methyl-3-aminopropanesulfonic acid, 3-[(1,1-Dimethy 1-2-hydroxyethyl)amino]-2-hydroxypropanesulfonic, acid, 2-(N-Cyclohexylamino)ethanesulfonic acid, 3-(Cyclohexylamino)-2-hydroxy-I-propanesulfonic acid, 2-Amino-2-methyl-I-propanol, 3-(Cyclohexylamino)-1-propanesulfonic acid, an oxidizing agent; optionally, a passivating agent; optionally a chelating agent, optionally abrasive particles, optionally a surfactant, optionally a secondary buffering agent and water. The method of the invention comprises the steps of: a) providing a wafer comprising a first material having a surface etched to form a pattern and a second material deposited over the surface of the first material; b) contacting the second material of the wafer with abrasive in the presence of the working slurry; and c) relatively moving the wafer or polishing pad or both while the second material is in contact with the slurry and abrasive particles until an exposed surface of the wafer is planar and comprises at least one area of exposed first material and one area of exposed second material.

Copper chemical mechanical polishing solutions using sulfonated amphiprotic agents

The invention relates to anti-skinning agents containing mixtures of organic compounds (combinations of additives), whereby the organic compounds are selected from the groups of (a) organic hydroxylamines and (b) alkylamines and/or alkyl alkanolamines and also relates to compositions containing the combination, especially oxidatively drying paints or coating compositions and article coated with such oxidatively drying paints or coating compositions.

Antiskinning compound and compositions containing them

The invention relates to a coating material, paint or finish which contains as anti-skinning agents a combination of at least two organic and/or inorganic oxygen scavengers and also relates to compositions containing the combination, especially oxidatively drying paints or coating compositions and articles coated with such oxidatively drying paints or coating compositions.

A family of slurries are disclosed which are useful in modifying exposed surfaces of wafers for semiconductor fabrication are provided along with methods of modifying exposed surfaces of wafers for semiconductor fabrication utilizing such a family of working slurries, and semiconductor wafers. The slurries of the invention are comprised of a liquid carrier; a sulfur-bearing compounds capable of converting copper to copper sulfide; optionally, abrasive particles (polishing agent; optionally a chelating agent; optionally a buffering agent; optionally, a stopping compound; optionally, other additives; and optionally, a co-solvent. The method of the invention comprises the steps of: a) providing a wafer comprising a first material having a surface etched to form a pattern and a second material deposited over the surface of the first material; b) contacting the second material of the wafer with abrasive in the presence of the working slurry; and c) relatively moving the wafer or polishing pad or both while the second material is in contact with the slurry and abrasive particles until an exposed surface of the wafer is planar and comprises at least one area of exposed first material and one area of exposed second material.

Composition and method for copper chemical mechanical planarization

A family of slurries useful in modifying exposed surfaces of wafers for semiconductor fabrication are provided along with methods of modifying exposed surfaces of wafers for semiconductor fabrication utilizing such a family of working slurries, and semiconductor wafers. The slurries of the invention are a solution of initial components, the components comprising: a sulfonated zwitterion selected from 2-(N-Morpholino)ethanesulfonic acid, (3-&lsqb;N-Morpholino&rsqb;)propanesulfonic acid, 2-&lsqb;(2-Amino-2-oxoethyl)amino&rsqb;ethanesulfonic acid, Piperazine-N,N&prime;-bis(2-ethanesulfonic acid), 3-(N-Morpholino)-2-hydroxypropanesulfonic acid, N,N-Bis(2-hydroxyethyl)-2-aminoethanesulfonic acid, 3-(N-Morpholino)propanesulfonic acid, N-(2-Hydroxyethyl)piperazine-N&prime;-(2-ethanesulfonic acid), N-Tris(hydroxymethyl)methyl-2 aminoethanesulfonic acid, 3-&lsqb;N,N-Bis(2-hydroxyethyl)amino&rsqb;-2-hydroxypropanesulfonic acid, 3-&lsqb;N-Tris(hydroxymethyl)methylamino)-2-hydroxypropanesulfonic acid, N-(2-hydroxyethyl)piperazine-N&prime;-(2-hydroxypropanesulfonic acid), Piperazine-N,N&prime;-bis(2-hydroxypropanesulfonic acid), N-(2-Hydroxyethyl)piperazine-N&prime;-(3-propanesulfonic acid), N-Tris(hydroxymethyl)methyl-3-aminopropanesulfonic acid, 3-&lsqb;(1,1-Dimethy 1-2-hydroxyethyl)amino&rsqb;-2-hydroxypropanesulfonic, acid, 2-(N-Cyclohexylamino)ethanesulfonic acid, 3-(Cyclohexylamino)-2-hydroxy-l-propanesulfonic acid, 2-Amino-2-methyl-1-propanol, 3-(Cyclohexylamino)-1-propanesulfonic acid, an oxidizing agent; optionally, a passivating agent; optionally a chelating agent, optionally abrasive particles, optionally a surfactant, optionally a secondary buffering agent and water. The method of the invention comprises the steps of: a) providing a wafer comprising a first material having a surface etched to form a pattern and a second material deposited over the surface of the first material; b) contacting the second material of the wafer with abrasive in the presence of the working slurry; and c) relatively moving the wafer or polishing pad or both while the second material is in contact with the slurry and abrasive particles until an exposed surface of the wafer is planar and comprises at least one area of exposed first material and one area of exposed second material.

Disclosed is an improved electrolyte formulation for the electrodeposition of copper onto electronic devices substrates and a process using the formulation. The formulation is a solution which contains copper alkanesulfonate salts and free alkanesulfonic acids and which is intended for the metallization of micron or sub-micron dimensioned trenches or vias.

Electroplating of copper from alkanesulfonate electrolytes

A high current density electrogalvanizing process and composition are disclosed for reducing high current density dendrite formation and controlling high current density roughness, grain size and orientation of a zinc coating obtained from an acidic aqueous zinc salt. The process comprises adding a sulfonated condensation product of naphthalene and formaldehyde to the acidic aqueous zinc salt in an electrolytic cell and applying an electromotive force to the anode and cathode in the cell sufficient to produce a high current density on the cathode. The composition consists essentially of an acidic aqueous zinc salt aqueous in combination with a sulfonated condensation product of naphthalene and formaldehyde which is used as an antidendritic agent.

Growing community of inventors

Doylestown, PA, United States of America

Nicholas Michael Martyak