Unisearch Limited

Nicholas Kenneth Roberts

Robert Norman Lamb

Antonella Petrella

The present invention relates to a method of growing a ZnO film using chemical vapour deposition (CVD), and to a ZnO film grown according to the method. The method includes providing a precursor in vapour form, the precursor substantially comprising Zn O(O CNR R ) , where R and R are any combination of akyl or perfluoroalkyl groups, and decomposing at least some of the vapour at the surface of the substrate such that the film of zinc oxide forms. An advantage of using this precursor material is that, unlike in the prior art, no deliberate introduction of water vapour to improve christallographic orientation is required. Higher purities in oxide films are produced.

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Kirrawee, Australia

Nicholas Kenneth Roberts