Corning Incorporated

Nicholas John Visovsky

Nicholas Francis Borrelli

Chung-En Zah

David G Grossman

David Francis Dawson-Elli

Yabo Li

Kechang Song

Methods for forming grating profiles in semiconductor laser structures comprise the steps of providing a semiconductor wafer comprising a wafer substrate, an etch stop layer disposed over the wafer substrate, a grating layer disposed over the etch stop layer, an etch mask layer disposed over the grating layer, and a photoresist layer disposed over the etch mask layer, forming a photoresist grating pattern, transferring the photoresist grating pattern into the grating layers via dry etching, and removing the photoresist layer, selectively wet etching the grating layer to form the grating profile in the grating layer. The placement of the grating layer between the etch mask and etch stop layers controls the selective wet etching step. The method also comprises removing the etch mask layer via selective wet etching without altering the grating profile, and regrowing an upper cladding layer to produce the semiconductor laser structure.

Semiconductor buried grating fabrication method

A reflective polarzier for visible light wavelengths formed of a plurality of polarizer units. Each polarizer unit having a transparent, inorganic substrate with first and second opposing surfaces. The first surface is coated with a single layer of a dielectric material, and the second surface is coated with a layer of a highly reflective metal film or a dielectric material. The polarizer is configured to produce a &ldquo;quasi-straight path,&rdquo; such that a light ray exiting the substrate is substantially parallel with a corresponding, incident light ray entering the substrate. The polarizer exhibits polarization over the entire visible spectrum.

Inorganic visible light reflection polarizer

Growing community of inventors

Corning, NY, United States of America

Nicholas John Visovsky