Raytheon Company

Nicholas J Kolias

Kenneth William Brown

John P Bettencourt

Brian D Schultz

Kiuchul Hwang

John Logan

Francois Y Colomb

Robert E Leoni

James J Chen

Gabriel M Rebeiz

A semiconductor device having a substrate, a pair of Group III-Nitride layers on the substrate forming: a heterojunction with a 2 Dimensional Electron Gas (2DEG) channel in a lower one of the pair of Group III-Nitride layers, a cap beryllium doped Group III-Nitride layer on the upper one of the pair of Group III-Nitride layers; and an electrical contact in Schottky contact with a portion of the cap beryllium doped, Group III-Nitride layer.

Depletion mode high electron mobility field effect transistor (HEMT) semiconductor device having beryllium doped Schottky contact layers

A power combiner/divider having a waveguide, a plurality of amplifiers disposed on a supporting structure, a plurality of probes, each one having a first end electrically coupled to an output of a corresponding one of the plurality of amplifiers and a second end projecting outwardly from the supporting structure and into the waveguide. The probes are disposed in a common region of the waveguide. The region has a common electric field maximum within the waveguide. A first portion of the probes proximate the sidewalls have lengths different from a second portion of the probes disposed in a region distal from the sidewalls of the waveguide. The waveguide is supported by the support structure. The power combiner is a monolithic microwave integrated circuit structure.

Multiple E-probe waveguide power combiner/divider

A structure having a coplanar waveguide transistor; and a microwave section, coupled to the transistor, having: a strip conductor coplanar with the electrodes of the coplanar waveguide transistor and a ground plane conductor disposed under the strip conductor.

Micropstrip transmission line/coplanar waveguide (CPW) transistor structure

A semiconductor structure having a transistor and a thermo electronic structure. The transistor has a control electrode for controlling a flow of carriers through a semiconductor layer between a pair of electrodes. The thermo electronic structure has a first portion disposed on at least one of the pair of electrodes and a second portion disposed over a region of the semiconductor layer proximate the control electrode between the control electrode and said at least one of the pair of electrode. The thermo electronic structure extends from the first portion to the second portion for removing heat generated heat from said region in the semiconductor layer.

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Winchester, MA, United States of America

Nicholas J Kolias