University of California

The United States of America As Represented by the United States

The United States of America As Represented by the Department of Energy

Nicholas J Colella

Daniel M Makowiecki

John A Kerns

Howard Lee Davidson

Joseph R Kimbrough

Fred Mitlitsky

James L Kaschmitter

Pete J Davis

Kenneth L Blaedel

Joel B Truher

Robert S Juntz

Kenneth W Struve

Tommy E Smith, Jr

A process for fabricating a composite material such as that having high thermal conductivity and having specific application as a heat sink or heat spreader for high density integrated circuits. The composite material produced by this process has a thermal conductivity between that of diamond and copper, and basically consists of coated diamond particles dispersed in a high conductivity metal, such as copper. The composite material can be fabricated in small or relatively large sizes using inexpensive materials. The process basically consists, for example, of sputter coating diamond powder with several elements, including a carbide forming element and a brazeable material, compacting them into a porous body, and infiltrating the porous body with a suitable braze material, such as copper-silver alloy, thereby producing a dense diamond-copper composite material with a thermal conductivity comparable to synthetic diamond films at a fraction of the cost.

Process for fabricating composite material having high thermal conductivity

Composite material having high thermal conductivity and process for

A reusable grinding tool consisting of a replaceable single layer of abrasive particles intimately bonded to a precisely configured tool substrate, and a process for manufacturing the grinding tool. The tool substrate may be ceramic or metal and the abrasive particles are preferably diamond, but may be cubic boron nitride. The manufacturing process involves: coating a configured tool substrate with layers of metals, such as titanium, copper and titanium, by physical vapor deposition (PVD); applying the abrasive particles to the coated surface by a slurry technique; and brazing the abrasive particles to the tool substrate by alloying the metal layers. The precision control of the composition and thickness of the metal layers enables the bonding of a single layer or several layers of micron size abrasive particles to the tool surface. By the incorporation of an easily dissolved metal layer in the composition such allows the removal and replacement of the abrasive particles, thereby providing a process for replenishing a precisely machined grinding tool with fine abrasive particles, thus greatly reducing costs as compared to replacing expensive grinding tools.

Precision replenishable grinding tool and manufacturing process

A method for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells.

Fabrication of polycrystalline thin films by pulsed laser processing

A 'blink' technique, analogous to a person blinking at a flash of bright light, is provided for mitigating the effects of single event current latchup and prompt pulse destructive radiation on a micro-electronic circuit. The system includes event detection circuitry, power dump logic circuitry, and energy limiting measures with autonomous recovery. The event detection circuitry includes ionizing radiation pulse detection means for detecting a pulse of ionizing radiation and for providing at an output terminal thereof a detection signal indicative of the detection of a pulse of ionizing radiation. The current sensing circuitry is coupled to the power bus for determining an occurrence of excess current through the power bus caused by ionizing radiation or by ion-induced destructive latchup of a semiconductor device. The power dump circuitry includes power dump logic circuitry having a first input terminal connected to the output terminal of the ionizing radiation pulse detection circuitry and having a second input terminal connected to the output terminal of the current sensing circuitry. The power dump logic circuitry provides an output signal to the input terminal of the circuitry for opening the power bus and the circuitry for shorting the power bus to a ground potential to remove power from the power bus. The energy limiting circuitry with autonomous recovery includes circuitry for opening the power bus and circuitry for shorting the power bus to a ground potential. The circuitry for opening the power bus and circuitry for shorting the power bus to a ground potential includes a series FET and a shunt FET. The invention provides for self-contained sensing for latchup, first removal of power to protect latched components, and autonomous recovery to enable transparent operation of other system elements.

System level latchup mitigation for single event and transient radiation

A barrier at a uniform depth for an entire wafer is used to produce imaging devices less susceptible to noise pulses produced by the passage of ionizing radiation. The barrier prevents charge created in the bulk silicon of a CCD detector or a semiconductor logic or memory device from entering the collection volume of each pixel in the imaging device. The charge barrier is a physical barrier, a potential barrier, or a combination of both. The physical barrier is formed by an SiO.sub.2 insulator. The potential barrier is formed by increasing the concentration of majority carriers (holes) to combine with the electron's generated by the ionizing radiation. A manufacturer of CCD imaging devices can produce radiation-tolerant devices by merely changing the wafer type fed into his process stream from a standard wafer to one possessing a barrier beneath its surface, thus introducing a very small added cost to his production cost. An effective barrier type is an SiO.sub.2 layer.

Radiation-tolerant imaging device

This invention uses a dipole magnet to bend the path of a charged particle beam. As the deflected particles exit the magnet, they are spatially dispersed in the bend-plane of the magnet according to their respective momenta and pass to a plurality of chambers having Faraday probes positioned therein. Both the current and energy distribution of the particles is then determined by the non-intersecting Faraday probes located along the chambers. The Faraday probes are magnetically isolated from each other by thin metal walls of the chambers, effectively providing real time current-versus-energy particle measurements.

Growing community of inventors

Livermore, CA, United States of America

Nicholas J Colella