International Business Machines Corporation

Nicholas J Clecak

Carlton G Willson

Barbara D Grant

Robert Dennis Miller

Terry C Tompkins

Dennis R McKean

Scott Arthur MacDonald

Ratnam Sooriyakumaran

Hiroshi Ito

Gregory Breyta

Ranee W Kwong

Harbans S Sachdev

William Dinan Hinsberg

Willard E Conley

Robert J Twieg

Hubert Schlosser

Donald Clifford Hofer

Leo L Linehan

Jerry Leff

Gary Scott Keller

Joseph Shao-Ying Feng

Richard D Balanson

Augustus C Ouano

Robert J Cox

Annette B Jaffe

The present invention relates to an improved lithographic imaging process for use in the manufacture of integrated circuits. The process provides protection to the photoresist film from airborne chemical contaminants.

Process for imaging of photoresist

Dry developable top surface imageable photoresist compositions which comprise, in admixture, a film-forming aromatic polymer resin activated to electrophilic substitution, an acid catalyzable agent capable of being inserted into the aromatic polymer resin, and a radiation degradable acid generating compound and processes for generating positive tone resist images on substrates therewith.

Dry developable photoresist compositions and method for use thereof

A lithographic resin for use with deep ultraviolet radiation comprises a weakly acidic resin and an alpha phosphoryl substituted diazo carbonyl compound as a sensitizer.

High contrast, high resolution deep ultraviolet lithographic resist

The orientation of the alignment layer in a raster-scanned thermally addressed smectic liquid crystal display device can be chosen relative to the writing orientation to accentuate a selected characteristic. A perpendicular alignment with respect to the scan direction produces uniformly written images in both scan directions to allow high quality bidirectional writing. In a preferred embodiment the liquid crystal cell includes a liquid crystal material comprising 4-octyloxy-4'-cyanobiphenyl 37.5%, 4-decyl-4'-cyanobiphenyl 36.8% weight percent and 4-undecyl-4'-cyanobiphenyl 25.7 weight percent.

Alignment layer orientation in raster scan thermally addressed smectic

A lithographic resist for use with deep ultra-violet radiation comprising an acidic resin and a diazohomotetramic acid sensitizer.

Deep ultra-violet lithographic resists with diazohomotetramic acid

Positive resists are formed from a soluble phenolic resin and a sensitizer which is a diester of a 1-oxo-2-diazonaphthalene sulfonic acid and of an unsymmetrical primary or secondary aliphatic diol which is a mixture of geometric and diastereoisomers.

Positive resist compositions

Phenolic-aldehyde resins sensitized with Meldrum's diazo or a homologue thereof are useful as lithographic resists sensitive to deep ultra-violet light.

Ultra-violet lithographic resist composition and process

Lithographic resist compositions are provided which permit an improved lift-off process in which the deposition mask with apertures has the desirable negative slope or overhang. The resist composition comprises a phenolic-aldehyde resin, a photosensitizer and Meldrum's diazo, or Meldrum's acid or suitable analogs thereof as a profile modifying agent. The profile modifying agents useful in the present invention have the formula: ##STR1## wherein R.sub.1 is C.sub.1 to C.sub.20 alkyl or aryl, R.sub.2 is H, C.sub.1 to C.sub.20 alkyl or aryl, or together R.sub.1 and R.sub.2 are cycloalkyl, A is N or H.

Lithographic resist composition for a lift-off process

Electrochromic display devices having very desirable stability and reversibility are obtained using as the oxidant certain fluorene compounds substituted with at least two alkoxy groups per molecule. The display device comprises a reactive medium between two electrically conductive electrodes at least one of which is transparent. The reactive medium comprises an anhydrous solvent and an oxidant/reductant pair.

Growing community of inventors

San Jose, CA, United States of America

Nicholas J Clecak