Texas Instruments Corporation

Nicholas Andrew Kusek

Fuchao Wang

Damien Thomas Gilmore

Prakash Dalpatbhai Dev

Robert Ray Spangler

Kenneth Ryan Thomas

Michael Glenn Williams

Ingu Song

In a described example method, semiconductor wafer with a backside silicon nitride layer is encapsulated with a diffusion barrier layer prior to a high temperature anneal greater than about 1000 degrees Celsius. After the high temperature anneal the diffusion barrier layer and the backside silicon nitride layers are stripped.

Methods and apparatus for preventing counter-doping during high temperature processing

A method of process control for a batch process includes pre-measuring a monitor lot to obtain pre-metrology data regarding at least a first process parameter. There are no product units included with the monitor lot. The pre-metrology data is saved together with an identifier for the first monitor unit. A batch is staged for the batch process including at least a first product lot including a plurality of product units together with the first monitor unit. The batch is batch processed through the batch process. After the batch processing, the first monitor unit is measured to obtain post-metrology data for the first process parameter. At least one of the post-metrology data and a difference between the post-metrology data and pre-metrology data is saved to a data file with an identifier for the first product lot or the pre-metrology data and post-metrology data is directly written to the first product lot.

Monitor data attachment to product lots for batch processes

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Nicholas Andrew Kusek