First Solar, Inc.

Other

Calyxo Gmbh

Nicholas Alan Reiter

Harold A McMaster

Ricky Charles Powell

Gary L Dorer

Steven M Cox

Terence D Kahle

Norman W Johnston

Kenneth R Kormanyos

Harold A Mcmaster

A useful technique for the temporary modification of Fermion mass at room temperature in certain metalloids is disclosed. This technique has demonstrated an easily observable weight modification effect, using novel but comparatively inexpensive materials, in an industrial or every-day environment, at room temperature. Various simple and easily engineered methods for converting this modification into a useful source of propulsive directed force are disclosed.

Device and method for inducing fermion mass modifications in metalloids

A process for coating a substrate at atmospheric pressure comprises the steps of vaporizing a controlled mass of semiconductor material at substantially atmospheric pressure within a heated inert gas stream, to create a fluid mixture having a temperature above the condensation temperature of the semiconductor material, directing the fluid mixture at substantially atmospheric pressure onto the substrate having a temperature below the condensation temperature of the semiconductor material, and depositing a layer of the semiconductor material onto a surface of the substrate.

Atmospheric pressure chemical vapor deposition

Apparatus (12, 12a) and a method for depositing a semiconductor material on a glass sheet substrate (G) utilizes a distributor (22) including a heated permeable member (24) through which a carrier gas and a semiconductor material are passed to provide a vapor that is deposited as a semiconductor layer on the conveyed glass sheet substrate. The permeable member (24) is tubular and has an electrical voltage applied along its length to provide the heating, and the carrier gas and the semiconductor as a powder are introduced into the tubular permeable member for flow outwardly therefrom as the vapor. A shroud (34) extending around the tubular permeable member (24) has an opening (36) through which the vapor flows for the semiconductor layer deposition. In one embodiment of apparatus (12), the semiconductor layer is deposited on an upwardly facing surface (56) of the glass sheet substrate (G) while another embodiment of the apparatus (12a) deposits the semiconductor layer on a downwardly facing surface (54) of the substrate.

Apparatus and method for depositing a semiconductor material

Apparatus (12, 12a) and a method for depositing a material on a substrate (G) utilizes a distributor (22) including a heated permeable member (24) through which a carrier gas and a material are passed to provide a vapor that is deposited on a conveyed substrate. The permeable member (24) is tubular and has an electrical voltage applied along its length to provide the heating, and the carrier gas and the material as a powder are introduced into the tubular permeable member for flow outwardly therefrom as the vapor. A shroud (34) extending around the tubular permeable member (24) has an opening (36) through which the vapor flows for the deposition. In one embodiment of apparatus (12), the vapor is deposited on an upwardly facing surface (56) of the substrate, while another embodiment of the apparatus (12a) deposits the vapor on a downwardly facing surface (54) of the substrate.

Apparatus and method for depositing a material on a substrate

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Gibsonburg, OH, United States of America

Nicholas Alan Reiter