Boe Technology Group Co., Ltd.

Beijing Boe Technology Development Co., Ltd.

Fuzhou Boe Optoelectronics Technology Co., Ltd.

Niangi Yao

Guangcai Yuan

Zheng Liu

Ce Ning

Zhengliang Li

Hehe Hu

Kun Zhao

Lizhong Wang

Liangliang Li

Shuilang Dong

Jie Huang

Dapeng Xue

Xiaochun Xu

Feifei Li

Provided are a thin film transistor, a display substrate and a display device, the thin film transistor includes: a gate on a base substrate; an active layer between the gate and the base substrate, the active layer includes a source contact portion, a drain contact portion and a middle portion therebetween, orthographic projections of the middle portion and the gate on the base substrate overlaps to form a first overlapping region, a material of the middle portion includes a metal oxide containing a doped element, a dissociation energy of the doped element from an oxygen element is greater than 500 Kj/mol; a source connected to the source contact portion and a drain connected to the drain contact portion, a ratio of an area of the orthographic projection of the gate on the base substrate to an area of the first overlapping region is less than or equal to 3.

Thin film transistor, display substrate and display device

The present disclosure provides a display substrate including: a base substrate, and a thin film transistor, an oxygen supplementing functional layer and an oxygen containing layer formed on the base substrate. The thin film transistor includes: an active layer in direct contact with the oxygen containing layer, and the active layer includes an oxide semiconductor material. The oxygen supplementing functional layer includes a metal oxide material and serves as a first electrode of the display substrate. The oxygen containing layer is between the oxygen supplementing functional layer and the base substrate.

Manufacturing method of display substrate and display device

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Beijing, China

Niangi Yao