Epicmems(xiamen) Co. Ltd

Nianchu Hu

Ping Li

Bin Jia

Wei Wang

Jiang Jiang

Mingguo Zhu

Yanhao Peng

The present disclosure provides a radio frequency filter, including: a substrate; a supporting electrode protruded on a front surface of the substrate; and a thin film structure formed on the substrate and spaced with the substrate by the supporting electrode. An end surface of a top end of the supporting electrode is in sealing contact with a front surface of the thin film structure.

Radio frequency filter

The present disclosure provides a method of preparing a radio frequency filter, including: a substrate; a supporting electrode protruded on a front surface of the substrate; and a thin film structure formed on the substrate and spaced with the substrate by the supporting electrode. An end surface of a top end of the supporting electrode is in sealing contact with a front surface of the thin film structure.

Method of preparing radio frequency filter

A method of manufacturing a bulk acoustic wave filter is provided, including: forming an acoustic reflection air cavity, a sacrificial layer, a seed layer, a lower electrode layer and a piezoelectric layer of n resonators on a substrate in sequence, wherein n is greater than or equal to 2; taking N from 1 to n for respectively repeating following steps: forming an N-th metal hard mask layer, defining an effective area of a first resonator to an N-th resonator by using a photolithography process, removing the N-th metal hard mask layer outside the effective area of the first resonator to the N-th resonator, oxidizing the piezoelectric layer outside the effective area of the first resonator to the N-th resonator to form an N-th oxidized part of the piezoelectric layer, and etching the N-th oxidized part of the piezoelectric layer; removing the metal hard mask layer of the effective area of the first resonator to the N-th resonator, so as to form the piezoelectric layer having different thicknesses of the first resonator to the N-th resonator; and forming an upper electrode layer on the piezoelectric layer having different thicknesses of the first resonator to the N-th resonator.

Bulk acoustic wave filter and method of manufacturing bulk acoustic wave filter

A chip encapsulation structure, including: a wafer provided with a groove; a first metal wire arranged on surfaces of the groove and the wafer; a metal solder ball arranged on the first metal wire or on a metal pad of the chip, and is configured to solder the metal pad of the chip to the first metal wire; a first plastic encapsulation film covering upper surfaces of the wafer, the chip and the first metal wire, and entering a gap between a periphery of a functional area of the chip and the first metal wire, so as to form a closed cavity among the wafer, the groove and the chip; an inductive structure arranged on an upper surface of the first plastic encapsulation film and/or a lower surface of the wafer, and connected to the chip through the first metal wire; and a pad arranged on the inductive structure.

Chip encapsulation structure and encapsulation method

The present disclosure provides a bulk acoustic wave resonator, a manufacturing method thereof, and a filter, wherein the bulk acoustic wave resonator includes: a substrate; an acoustic reflection unit on the substrate; a piezoelectric stack structure on the acoustic reflection unit; and a pad on the piezoelectric stack structure; wherein the pad has an overlapping region with the acoustic reflection unit. The acoustic wave resonator, the manufacturing method thereof and the filter of the present disclosure can effectively reduce connection resistance of the bulk acoustic wave resonator, thereby reducing insertion loss of the filter.

Bulk acoustic wave resonator, manufacturing method of the same, and filter

A hybrid acoustic resonator. An interdigital electrode is provided in a first region of a surface of a piezoelectric film facing away from a substrate, and forms an interdigital transducer. At least two trenches are provided in a second region of the surface of the piezoelectric film facing away from the substrate. A bulk-acoustic-wave propagation portion is formed between adjacent trenches. A bulk-acoustic-wave electrode is provided on a side surface of the bulk-acoustic-wave propagation portion, and there is an air gap at a surface of the bulk-acoustic-wave electrode facing away from the bulk-acoustic-wave propagation portion. Thereby, the hybrid acoustic resonator includes both the surface acoustic resonator and the bulk acoustic resonator. An acoustic wave in the bulk-acoustic-wave propagation portion and an acoustic wave in the interdigital transducer are both transmitted along a transversal direction.

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Fujian, China

Nianchu Hu