Imec Vzw

Imec

Katholieke Universiteit Leuven, Ku Leuven R&d

Niamh Waldron

Bernardette Kunert

Nadine Collaert

Amey Mahadev Walke

Matty Caymax

Liesbeth Witters

Clement Merckling

Robert Langer

Yves Mols

Weiming Guo

Gang Wang

Geert Hellings

Ming Zhao

Maarten Leys

Thomas Y Hoffman

Thomas Y Hoffmann

Wei-e Wang

Bernadette Kunert

A method for forming a III-V construction over a group IV substrate comprises providing an assembly comprising the group IV substrate and a dielectric thereon. The dielectric layer comprises a trench exposing the group IV substrate. The method further comprises initiating growth of a first III-V structure in the trench, continuing growth out of the trench on top of the bottom part, growing epitaxially a sacrificial second III-V structure on the top part of the first III-V structure, and growing epitaxially a third III-V structure on the sacrificial second III-V structure. The third III-V structure comprises a top III-V layer. The method further comprises physically disconnecting a first part of the top layer from a second part thereof, and contacting the sacrificial second III-V structure with the liquid etching medium.

Integration of a III-V construction on a group IV substrate

The disclosed technology relates generally to the field of semiconductor devices, and more particularly to co-integration of GaN-based devices with Si-based devices. In one aspect, a method of forming a semiconductor device includes forming a first wafer including, on a front side thereof, a III-V semiconductor layer stack formed on a first substrate and a first bonding layer. The III-V semiconductor layer stack includes a GaN-based device layer structure formed on the first substrate. The method additionally includes, subsequent to forming the first wafer, bonding the first bonding layer to a second bonding layer of a second wafer. The second wafer includes a second silicon substrate supporting an active device layer, a back-end-of-line interconnect structure and the second bonding layer. The method further comprises, subsequent to bonding, thinning the first wafer from a backside, wherein thinning includes removing at least the first substrate. In another aspect, a semiconductor device includes a cointegrated N-polar HEMT.

Cointegration of gallium nitride and silicon

A method for forming a semiconductor structure comprising: providing a silicon substrate having a first and a second flat top surface belonging to a first and a second substrate region respectively, the first top surface being lower than the second top surface, thereby forming a step delimiting the first and the second substrate region. The method further comprises forming, at least partially, one or more silicon semiconductor devices in the second substrate region, and forming, at least partially, one or more III-V semiconductor devices in the first substrate region.

Integration of a III-V device on a Si substrate

The disclosed technology generally relates to integrated circuit devices having at least one transistor, and methods of fabricating the same. In one aspect, an integrated circuit device can be produced from a silicon substrate and can include at least one nano-ridge transistor formed from III-V semiconducting crystal portions. The III-V portions can be grown epitaxially from the silicon substrate using an intermediate portion which can be adapted to produce aspect ratio trapping. The nano-ridge transistor can have a reduced footprint on the silicon substrate, may be adapted for power RF applications, and can be combined with MOS or CMOS transistors within one and a same integrated circuit.

Integrated circuit including at least one nano-ridge transistor

The disclosed technology generally relates to semiconductor devices, and more specifically to a semiconductor device having a high aspect ratio channel layer. In one aspect, semiconductor device includes a semiconductor substrate having formed thereon a dielectric isolation layer having an opening formed therethrough. The semiconductor device additionally includes a filling isolation structure having a portion formed in the opening and a portion protruding above the dielectric isolation layer, wherein the filling isolation structure comprises a dielectric filling layer. The semiconductor device additionally includes a dielectric layer formed on the dielectric isolation layer, wherein the dielectric layer and the dielectric filling layer have top surfaces that are substantially co-planar to form a common top surface. The semiconductor device further includes a first vertical channel layer laterally interposed between and in contact with the dielectric layer and the dielectric filling layer at a first side of the dielectric filling layer, wherein the first vertical channel layer extends above the common top surface.

High aspect ratio channel semiconductor device and method of manufacturing same

The disclosed technology generally relates to manufacturing of semiconductor devices, and more particularly to manufacturing of a semiconductor device by transferring an active layer from a donor substrate. One aspect is a method of manufacturing a semiconductor device includes providing a donor wafer for transferring an active layer, comprising a group IV, a group III-IV or a group II-VI semiconductor material, to a handling wafer. The method includes forming the active layer on a sacrificial layer of the donor wafer, bonding the donor wafer to the handling wafer, and selectively etching the sacrificial layer to remove the donor wafer from the handling wafer, thereby leaving the active layer on the handling wafer.

Method of transferring a semiconductor layer

The disclosed technology generally relates to semiconductor devices and more particularly to a gate-all-around semiconductor device, and methods of fabricating the same. In one aspect, the method comprises providing on a semiconductor substrate between STI regions at least one suspended nanostructure anchored by a source region and a drain region. The suspended nanostructure is formed of a crystalline semiconductor material that is different from a crystalline semiconductor material of the semiconductor substrate. A gate stack surrounds the at least one suspended nanostructure.

Gate-all-around semiconductor device and method of fabricating the same

The disclosed technology generally relates to semiconductor-on-insulator (SOI) devices and more particularly to SOI devices having a channel region comprising a Group III-V or a Group IV semiconductor material, and also relates to methods of fabricating the same. In one aspect, a method comprises providing a pre-patterned donor wafer, providing a handling wafer and bonding the pre-patterned donor wafer to the handling wafer by contacting the first oxide layer to the handling wafer. Providing a pre-patterned donor wafer comprises providing a donor substrate comprising a first semiconductor material, forming shallow trench isolation (STI) regions in the donor substrate, and forming fins in the donor substrate in between the STI regions, where each fin comprises a Group III-V or Group IV semiconductor material that is different from the first semiconducting material and laterally extends in a direction parallel to a major surface of the donor substrate and between the STI regions. Providing the pre-patterned donor wafer additionally includes providing a first oxide layer overlying the STI regions and the fins. After bonding the donor wafer to the handling wafer, at least part of the first semiconducting material of the pre-patterned donor wafer is removed and the STI regions and the fins are thinned thereby forming channel regions comprising the Group III-V or Group IV semiconductor material.

Semiconductor-on-insulator device and method of fabricating the same

Methods of manufacturing a III-V compound semiconductor material, and the semiconductor material thus manufactured, are disclosed. In one embodiment, the method comprises providing a substrate comprising a first semiconductor material having a {001} orientation and an insulating layer overlaying the first semiconductor material. The insulating layer comprises a recessed region exposing an exposed region of the first semiconductor material. The method further comprises forming a buffer layer overlaying the exposed region that comprises a group IV semiconductor material. The method further comprises thermally annealing the substrate and the buffer layer, thereby roughening the buffer layer to create a rounded, double-stepped surface having a step density and a step height. A product of the step density and the step height is greater than or equal to 0.05 on the surface. The method further comprises at least partially filling the recessed region with a III-V compound semiconductor material overlaying the surface.

Antiphase domain boundary-free III-V compound semiconductor material on semiconductor substrate and method for manufacturing thereof

Disclosed are methods for forming hybrid metal-oxide-semiconductor field effect transistors (MOSFETs) and the hybrid MOSFETS thus obtained. In one embodiment, a method is disclosed that includes providing a first substrate comprising a first region and a second region, providing a second substrate comprising a second semiconductor layer and an insulating layer overlaying the second semiconductor layer, and direct substrate bonding the second substrate to the first substrate, thereby contacting the first region and the second region with the insulating layer. The method further includes selectively removing the second semiconductor layer and the insulating layer in the first region, thereby exposing the first semiconductor layer in the first region, forming a first gate stack of a first MOSFET on the exposed first semiconductor layer in the first region, and forming a second gate stack of a second MOSFET on the second semiconductor layer in the second region.

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Heverlee, Belgium

Niamh Waldron