Motorola Corporation

Ngoc V Le

William J Dauksher

Paige M Holm

Douglas J Resnick

Steven M Smith

Jeffrey H Baker

Donald F Weston

Diana J Convey

Kathy A Gehoski

A method is provided for forming a monolithically integrated optical filter, for example, a Fabry-Perot filter, over a substrate (). The method comprises forming a first mirror () over the substrate (). A plurality of etalon material layers () are formed over the mirror (), and a plurality of etch stop layers () are formed, one each between adjacent etalon material layers (). A photoresist is patterned to create an opening () over the top etalon material layer () and an etch () is performed down to the top etch stop layer (). An oxygen plasma () may be applied to convert the etch stop layer () within the opening () to silicon dioxide (). The photoresist patterning, etching, and applying of an oxygen plasma may be repeated as desired to obtain the desired number of levels (). A second mirror () is then formed on each of the levels ().

Integrated multi-wavelength Fabry-Perot filter and method of fabrication

A direct imprinting process for Step and Flash Imprint Lithography includes providing () a substrate (); forming () an etch barrier layer () on the substrate; patterning () the etch barrier layer with a template () while curing with ultraviolet light through the template, resulting in a patterned etch barrier layer and a residual layer () on the substrate; and performing () an etch to substantially remove the residual layer. Optionally, a patterning layer () may be formed on the substrate () prior to forming the etch barrier layer (). Additionally, an adhesive layer () may be applied () between the substrate () and the etch barrier layer ().

Direct imprinting of etch barriers using step and flash imprint lithography

A process is provided for fabricating a viabetween bonded wafers without undercutting an organic bonding material. The process for forming the viain a structure including a dielectric materialand an organic bonding material, comprises forming a resist materialon the dielectric layerand etching through the dielectric layerand the organic bonding materialwith 60CF/20Ar/60CHF/20N. The resist may then be removed with an anisotropic high density oxygen plasma.

Plasma etch process for multilayer vias having an organic layer with vertical sidewalls

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Gilbert, AZ, United States of America

Ngoc V Le