Infineon Technologies Ag

Ngoc-Hoa Huynh

Saverio Trotta

Ashutosh Baheti

Ismail Nasr

Martin Richard Niessner

Georg Meyer-Berg

Maciej Wojnowski

Dominic Maier

Thomas Kilger

Claus Waechter

Bernhard Gebauer

Franz-Xaver Muehlbauer

Veronika Huber

Hans-Peter Forstner

A semiconductor device includes a semiconductor chip and a redistribution layer on a first side of the semiconductor chip. The redistribution layer is electrically coupled to the semiconductor chip. The semiconductor device includes a dielectric layer and an antenna on the dielectric layer. The dielectric layer is between the antenna and the semiconductor chip.

Semiconductor device including an antenna

In accordance with an embodiment, a packaged radio frequency (RF) circuit includes a radio frequency integrated circuit (RFIC) disposed on a substrate that has plurality of receiver circuits coupled to receive ports at a first edge of the RFIC, and a first transmit circuit coupled to a first transmit port at a second edge of the RFIC. The packaged RF circuit also includes a receive antenna system disposed on the package substrate adjacent to the first edge of the RFIC and a first transmit antenna disposed on the package substrate adjacent to the second edge of the RFIC and electrically coupled to the first transmit port of the RFIC. The receive antenna system includes a plurality of receive antenna elements that are each electrically coupled to a corresponding receive port.

RF system with an RFIC and antenna system

An antenna multiplexer with a pi-network circuit is described, having an inductance connected in series and, on each of the two connection sides of the inductance, a capacitance connected in parallel. The pi-network circuit is used for effecting an impedance mismatch of a signal path of the antenna multiplexer.

Antenna multiplexer with a Pi-network circuit and use of a Pi-network

A filter structure comprises a filter having an input port and an output port and a carrier to which the filter is attached having a reference potential area. The input port includes a first pad for receiving an input signal and a second pad for a first reference potential related to the input signal. The output port has a third pad for outputting an output signal and a fourth pad for a second reference potential related to the output signal. A first connecting wire contacts the second pad at a first connection point and the reference potential area at a second connection point. A second connecting wire contacts the fourth pad at a third connection point and contacts the reference potential area at a fourth connection point. A distance between the second and the fourth connection point is smaller than a distance between the first and the third connection point.

Filter structure and method for the design of a filter

A FBAR ladder filter which may yield less degradation in the stopband near the passband edges than conventionally grounded FBAR ladder filters. For that purpose a thin film resonator (FBAR) ladder filter having a plurality of serially-coupled FBAR elements, each serially-coupled FBAR element including an upper metal electrode and a lower metal electrode, and a plurality of shunt-coupled FBAR elements, each shunt-coupled FBAR element including an upper metal ground electrode providing a ground node and a lower metal electrode, is provided with at least one capacitor element including an upper metal electrode and a lower metal electrode, wherein each capacitor element is serially coupled between two ground nodes so that the inductive coupling of the shunt-coupled FBAR elements is compensated.

FBAR ladder filter and method of grounding of FBAR ladder filters

Growing community of inventors

Forstinning, Germany

Ngoc-Hoa Huynh