Taiwan Semiconductor Manufacturing Comp. Ltd.

Newton Wang

Chih-Tien Chang

Sheng-Liang Pang

The present invention provides an improved apparatus and method for removing condensates, such as chlorides, from a dry etch, vacuum effluent stream. Dry etching of metallizations under vacuum conditions, using RF plasma and other techniques, is used in the processing of semiconductor devices and other applications. The apparatus and method remove accumulated chloride deposits that would otherwise restrict and ultimately plug the pipe that carries the vacuum effluent stream. The present invention utilizes an inner tube that is placed on the interior of the pipe and magnetically coupled to an outer tube that surrounds the exterior of the pipe. Translation of the outer tube causes translation of the inner tube, thereby removing accumulated condensate from the pipe. The apparatus may be configured so as to sense the accumulation of the condensate and automatically actuate the apparatus to remove the accumulated condensate.

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Hsin-Chu, Taiwan

Newton Wang