C. P. Clare Corporation

Ixys Corporation

Ccp. Clare Corporation

Nestore Polce

Mark F Heisig

Scotten W Jones

Nathan Zommer

Ronald P Clark

A photovoltaic (PV) cell device comprises a first semiconductor substrate; a second semiconductor substrate bonded to the first semiconductor substrate; an insulating layer provided between the first and second substrates to electrically isolate the first substrate from the second substrate; a plurality of PV cells defined on the first substrate, each PV cell including a n-type region and a p-type region; a plurality of vertical trenches provided in the first substrate to separated the PV cells, the vertical trenches terminating at the insulating layer; a plurality of isolation structures provided within the vertical trenches, each isolation structure including a first isolation layer including oxide and a second isolation layer including polysilicon; and an interconnect layer patterned to connect the PV cells to provide X number of PV cells in series and Y number of PV cells in parallel. The n-type regions are formed by performing ion implantation of arsenic to provide shallow junction depths for the n-type regions, so that PV cell device is optimized for sunlight.

Discrete and integrated photo voltaic solar cells

A high voltage integrated switching device includes at least one high voltage switching circuit, preferably employing DMOS technology and characterized by a breakdown voltage of at least 100 volts, on a dielectrically isolated, bonded and vertically trenched silicon substrate. Multiple high-voltage switching circuits may be located in close proximity on a single substrate without circuit breakdown or shorting during circuit operation. The circuit may further include one or more low- and/or intermediate-voltage circuits employing, for example, CMOS and bipolar technologies on the same silicon substrate and located in close proximity without voltage breakdown during circuit operation.

High voltage integrated switching devices on a bonded and trenched silicon substrate

A solid state photovoltaic generator circuit includes a source of activating radiation, an array of photodiodes responsive to the radiation, a switching device coupled to the photodiode array for responding to an electrical signal therefrom, and a high-impedance resistor which is made of substantially single-crystal silicon and is formed during the formation of the switching device. The fabrication of the circuit is thus significantly simplified and the resistor performance is stable over a wide range of operating temperatures.

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Chelmsford, MA, United States of America

Nestore Polce