Hitachi Energy Ltd

Anvil Semiconductors Limited

Hitachi Energy Switzerland Ag

Neophytos Lophitis

Florin Udrea

Munaf Rahimo

Chiara Corvasce

Tanya Trajkovic

Umamaheswara Vemulapati

Peter Ward

Luca De-Michielis

Thomas Stiasny

Jan Vobecky

Marina Antoniou

Uwe Badstuebner

An insulated gate bipolar transistor includes a source electrode, a collector electrode, a source layer, a base layer, a drift layer and a collector layer. Trench gate electrodes extend through the base layer into the drift layer. A channel is located between the source layer, the base layer and the drift layer. A trench Schottky electrode is adjacent to one of the trench gate electrodes and includes an electrically conductive Schottky layer arranged lateral to the base layer and extends through the base layer into the drift layer. The Schottky layer is electrically connected to the source electrode. Collection areas are located in the drift layer at a respective trench gate electrode bottom of the trench gate electrodes or of the trench Schottky electrode. The Schottky layer forms a Schottky contact to the collection area at a contact area.

Insulated gate bipolar transistor including trench Schottky electrode

We disclose a high voltage semiconductor device comprising a semiconductor substrate of a second conductivity type; a semiconductor drift region of the second conductivity type disposed over the semiconductor substrate, the semiconductor substrate region having higher doping concentration than the drift region; a semiconductor region of a first conductivity type, opposite to the second conductivity type, formed on the surface of the device and within the semiconductor drift region, the semiconductor region having higher doping concentration than the drift region; and a lateral extension of the first conductivity type extending laterally from the semiconductor region into the drift region, the lateral extension being spaced from a surface of the device.

High voltage semiconductor device with reduced peak electric field in active and termination areas of the device

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Hinckley, United Kingdom

Neophytos Lophitis